SEMICONDUCTOR
DO-35 Hermetically
Sealed Glass BI-directional Trigger Diode
AXIAL LEAD
DO35
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
mW
A
DEVICE MARKING DIAGRAM
Power Dissipation
PD
150
@ Ta = 50℃
Repetitive peak on-state current
tp = 20us, F = 120Hz
ITRM
2
Tstg
Tj
Storage temperature range
Operating junction temperature
-40 ~ 125
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
§ VBO = 32V
§ DO-35 Package (JEDEC)
§ Through-Hole Device Type Mounting
§ Hermetically Sealed Glass
§ Compression Bonded Construction
§ All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
§ RoHS Compliant
§ Solder Hot Dip Tin (Sn) Terminal Finish
Electrical Characteristics
TA = 25°C unless otherwise noted
Limits
Unit
Symbol
Parameter
Test Condition
Min
Max
36
3
VBO
Breakover Voltage
C = 22nF (note 2)
C = 22nF (note 2)
28
Volts
Volts
[VBO’ ]- [VBO
]
Breakover Voltage Symmetry
Dynamic Breakover Voltage
[DV]
Vo
VBO and VF at 10mA
5
5
Volts
Volts
uA
See diagram 2
Output Voltage
(R = 20Ω)
IBO
Breakover Current
C = 22nF (note 2)
50
TR
IB
Rise Time
See diagram 3
VR = 0.5VBO max
See diagram 2
2
uS
uA
A
Leakage Current
Peak Current
10
0.3
IP
Notes:
1. All parameters applicable to both forward and reverse directions.
2. Connected in parallel in the device
Number: DB-131
Jun 2016 / B
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