Datasheet > KE203W

KE203W

更新时间： 2024-09-23 12:33:59

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	59K
描述
Metal silicon junction,majority carrier conduction

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数据手册

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KE203W 数据手册

Product specification

KE183W thru KE253W

SOD-123

Unit: mm

+0.1

-0.1

+0.05

1.1

-0.05

2.7

Features

+0.1

-0.1

3.7

0.1max

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

0.50

0.35

Absolute Maximum Ratings Ta = 25

Parameter

Regulator current at specified test

Knee impedance Test Voltageat I=0.8 I^P

Peak Operating Voltage

Symbol

I^P

KE183W

KE203W

KE223W

KE253W

Unit

3.0

100.0

V^K

V^BO

A 90Hz signal VK with RMS value equal to 10% of

test voltage ,V^K,is superimposed on V^K:R^K=V^K/ik

10 to 300

R^DK

Ohm

1.0

DC Power

P^D

T^J

-50 to +150

Operating junction temperature range

Storage temperature range

Typical temperature coefficient

T^STG

T^C

-0.20 to -0.15

-0.20 to -0.32

-0.23 to -0.32

-0.23 to -0.35

Note1:Field-effect current regulator diodes are circuit elements that provide a currentessentially independent of voltage,

These diodes are especially designed for maximum impedance over the operating range. These devices may be used

in parallel to obtain higher currents

Note2:Generally ip indicate 10% tolerance;suffix:"A" indicate 5% tolerance

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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