Datasheet > KDW2503N

KDW2503N

更新时间： 2024-11-17 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	64K
描述
Dual N-Channel 2.5V Specified PowerTrench MOSFET

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中文翻译

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数据手册

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KDW2503N 数据手册

SMD Type

ICIC

Dual N-Channel 2.5V Specified PowerTrench MOSFET

KDW2503N

TSSOP-8

Features

Unit: mm

5.5 A, 20 V. RDS(ON) = 0.021 @ VGS = 4.5 V

R^DS(ON)= 0.035 @ VGS =2.5V

Fast switching speed

High performance trench technology for extremely low RDS(ON)

Extended VGSS range ( 12V) for battery applications

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1a)

Drain Current Pulsed

5.5

I^D

Power Dissipation for Single Operation (Note 1a)

Power Dissipation for Single Operation (Note 1b)

Operating and Storage Temperature

Thermal Resistance Junction to Ambient (Note 1a)

Thermal Resistance Junction to Ambient (Note 1b)

0.6

T^J, TSTG

-55 to 175

125

208

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