Datasheet > KDV287

KDV287

更新时间： 2024-11-25 11:29:27

品牌	Logo	应用领域
科信 - KEXIN		二极管
页数	文件大小	规格书
1页	34K
描述
Silicon Epitaxial Planar Diode

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中文翻译

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数据手册

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KDV287 数据手册

SMD Type

Diodes

Silicon Epitaxial Planar Diode

KDV287

SOD-323

Unit: mm

+0.1

1.7

-0.1

+0.05

0.85

-0.05

Features

High Capacitance Ratio : C2V/C25V=7.6(Typ.)

Low Series Resistance : rs=1.9 (Typ.)

Excellent C-V Characteristics, and Small Tracking Error.

Useful for Small Size Tuner.

+0.1

2.6

-0.1

1.0max

0.475

0.375

Absolute Maxim um Ratings Ta = 25

Parameter

Symbol

Value

Unit

Reverse Voltage

V^R

V^RM

T^j

Peak Reverse Voltage

Junction Temperature

35 (RL=10K

125

)

Storage Temperature Range

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Reverse Voltage

Symbol

V^R

Conditions

Min

Typ

Max

Unit

IR = 1

Reverse Current

Capacitance

I^R

VR = 28 V

C^2V

f = 1 MHz;VR = 2 V

f = 1 MHz;VR = 25 V

4.2

0.53

7.3

5.7

C^25V

C2V/C25V

r^s

0.68

2.3

Capacitance Ratio

Series Resistance

Note :

VR = 5V, f = 470 MHz

1.9

Available in matched group for capacitance to 6%.

C(Max.)-C(Min.)

0.06

C(Min.)

(V^R=2~25V)

Marking

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