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KDR740UL PDF预览

KDR740UL

更新时间: 2024-11-19 17:15:31
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
2页 72K
描述
ULP-2

KDR740UL 技术参数

生命周期:Active包装说明:LEADLESS, ULTRA SMALL, ULP-2, 2 PIN
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.75
其他特性:HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XBCC-N2元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
最大重复峰值反向电压:40 V表面贴装:YES
技术:SCHOTTKY端子形式:NO LEAD
端子位置:BOTTOMBase Number Matches:1

KDR740UL 数据手册

 浏览型号KDR740UL的Datasheet PDF文件第2页 
SEMICONDUCTOR  
KDR740UL  
SCHOTTKY BARRIER TYPE DIODE  
TECHNICAL DATA  
LOW CURRENT RECTIFICATION  
AND HIGH SPEED SWITCHING.  
H
2
1
2
1
FEATURES  
B
D
H
· Low Forward Voltage.  
· High Reliability.  
A
E
E
G
· Leadless ultra small package.  
· Suffix U : Qualified to AEC-Q101.  
ex) KDR740UL-RTK/HU  
DIM MILLIMETERS  
_
A
B
C
C1  
D
E
1.0+0.05  
0.6 0.05  
_
+
C1  
C
_
+
0.4 0.05  
0.38-+0.02  
0.03  
2
1
APPLICATIONS  
I
_
+
0.5 0.03  
0.25 +0.03  
0.65+0.03  
_
_
· Ultra high-speed swiching.  
· Protection circuits.  
G
H
I
0.05  
Max 0.05  
· Low voltage rectification.  
· Low power consumption applications.  
2
1
1. ANODE  
2. CATHODE  
ULP-2  
Marking  
CATHODE MARK  
MAXIMUM RATING (Ta=25)  
2
1
SD  
CHARACTERISTIC  
Reverse Voltage  
SYMBOL RATING  
UNIT  
V
VR  
IO  
40  
200  
Average Forward Current  
Surge Current(10ms)  
mA  
A
IFSM  
Tj  
3
Junction Temperature  
150  
Tstg  
Storage Temperature Range  
-55150  
)
ELECTRICAL CHARACTERISTICS (Ta=25  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
0.36  
0.5  
UNIT  
V
IF=10mA  
IF=100mA  
IF=200mA  
VR=40V  
-
-
-
-
-
-
-
-
VF  
IR  
Forward Voltage  
0.6  
Reverse Current  
10  
A
2018. 04. 10  
Revision No : 1  
1/2  

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