Datasheet > KDB2552(FDB2552)

KDB2552(FDB2552)

更新时间： 2024-10-15 18:09:47

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科信 - KEXIN		/
页数	文件大小	规格书
2页	51K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KDB2552(FDB2552) 数据手册

SMD Type

MOSFET

N-Channel PowerTrench MOSFET

KDB2552^(FDB2552)

Features

TO-263

Unit: mm

rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A

Qg(tot) = 39nC (Typ.), VGS = 10V

Low Miller Charge

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Low QRR Body Diode

UIS Capability (Single Pulse and Repetitive Pulse)

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current-Continuous T^C=25

T^A=25

Symbol

V^DSS

Rating

Unit

150

V^GSS

150

Power dissipation

1.0

Derate above 25

Thermal Resistance Junction to Ambient

Channel temperature

Storage temperature

RèJA

T^ch

175

Tstg

-55 to +175

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