4V Drive Nch+Nch MOSFET
SH8K1
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Each lead has same dimensions
Packaging specifications
Inner circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Package
Taping
TB
Type
Code
Basic ordering unit (pieces)
2500
SH8K1
∗2
∗2
(1) (2) (3) (4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
∗1
∗1
(1)
(2)
(3)
(4)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
Unit
V
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
30
20
V
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Continuous
Pulsed
5.0
A
Drain current
∗1
IDP
IS
20
A
Source current
(Body diode)
Continuous
Pulsed
1.6
A
∗1
∗2
ISP
6.4
A
Total power dissipation
Channel temperature
PD
2
W
°C
°C
Tch
Tstg
150
Storage temperature
−55 to +150
∗1 Pw 10μs, Duty cycle 1%
∗2 MOUNTED ON A CERAMIC BOARD.
Thermal resistance
Parameter
Symbol
Limits
62.5
Unit
∗
Channel to ambient
Rth (ch-a)
°C / W
∗MOUNTED ON A CERAMIC BOARD.
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2009.12 - Rev.A
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