Datasheet > 晶体管 > 功率场效应晶体管> KD2002-D5FW00A

KD2002-D5FW00A

更新时间： 2024-01-18 18:34:32

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
4页	170K
描述
By adopting a unique heating element structure that supports high-speed printing, clear print qual

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数据手册

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KD2002-D5FW00A 数据手册

4V Drive Nch+Nch MOSFET

SH8K1

Structure

Dimensions (Unit : mm)

Silicon N-channel MOSFET

SOP8

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small surface Mount Package (SOP8).

Application

Power switching, DC / DC converter.

Each lead has same dimensions

Packaging specifications

Inner circuit

(8)

(7)

(6)

(5)

(8) (7) (6) (5)

Package

Taping

Type

Code

Basic ordering unit (pieces)

2500

SH8K1

∗2

(1) (2) (3) (4)

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

Absolute maximum ratings (Ta=25C)

∗1

(1)

(2)

(3)

(4)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

Continuous

Pulsed

5.0

Drain current

∗1

I_DP

I_S

Source current

(Body diode)

Continuous

Pulsed

1.6

∗1

∗2

I_SP

6.4

Total power dissipation

Channel temperature

P_D

°C

Tch

Tstg

150

Storage temperature

−55 to +150

∗1 Pw 10μs, Duty cycle 1%

∗2 MOUNTED ON A CERAMIC BOARD.

Thermal resistance

Parameter

Symbol

Limits

62.5

Unit

∗

Channel to ambient

Rth (ch-a)

°C / W

∗MOUNTED ON A CERAMIC BOARD.

www.rohm.com

2009.12 - Rev.A

1/3

12 3 4

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