Datasheet > KCX3560

KCX3560

更新时间： 2024-06-27 12:11:47

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KCX3560 数据手册

76A，600V

KCX3560A

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

1.Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage

blocking capability without degrading performance over time. In addition, this advanced MOSFET is

designed to withstand high energy in avalanche and commutation modes. This new energy efficient design

also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and PWM motor controls, these devices are

particularly well suited for bridge circuits where diode speed and commutating safe operating areas are

critical and offer additional and safety margin against unexpected voltage transients.

2. Features

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

I_DSSand V_DS(ON)Specified at Elevated Temperature

Isolated Mounting Hole Reduces Mounting Hardware

3. Pin configuration

Function

Gate

Drain

Source

1 of 5

Rev 1.0 JAN 2018

12 3 4 5

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