Datasheet > KCP53-16

KCP53-16

更新时间： 2024-06-27 12:11:31

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	274K
描述
PNP Transistor

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中文翻译

获取价格

数据手册

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KCP53-16 数据手册

SMD Type

Transistors

PNP Medium Power Transistors

KCP53

-16

SOT-223

Unit: mm

■ Features

+0.2

3.50_-0.2

6.50_-0.2

● For AF driver and output stages

● High collector current

+0.2

0.90_-0.2

+0.1

3.00_-0.1

● Low collector-emitter saturation voltage

+0.3

7.00_-0.3

1.Base

+0.1

2.Collector

0.70_-0.1

2.9

4.6

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage (open emitter)

Collector-emitter voltage(open base)

Emitter-base voltage( open collector)

Collector current

Symbol

VCBO

VCEO

VEBO

Rating

-100

-80

Unit

-5

-1

power dissipation

1.5

thermal resistance from junction to ambient

Junction temperature

RθJA

83.3

150

℃/W

℃

Storage temperature

Tstg

-65 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Base-emitter breakdown voltage

Collector cutoff current

Symbol

Test conditions

Min

Typ Max

Unit

V(BR)CBO IC=- 0.1mA,IE=0

V(BR)CEO IC= -10mA,IB=0

V(BR)EBO IC= -10μA,IE=0

-100

-80

-5

ICBO

IEBO

VCB = -30 V, IE = 0

-100

Emitter cutoff current

VEB = -5 V, IC = 0

IC = -5 mA; VCE = -2 V

IC = -150 mA; VCE = -2 V

IC = -500 mA; VCE = -2 V

100

DC current gain

hFE

250

Collector-emitter saturation voltage

Base to emitter voltage

VCE(sat) IC = -500 mA; IB = -50 mA

-0.5

-1

VBE

IC = -500 mA; VCE = -2 V

IC = -50 mA; VCE = -10 V; f = 100 MHz 100

Transition frequency

MHz

■ Marking

Marking

BCP53

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中文翻译

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