Datasheet > KBU6M

KBU6M

更新时间： 2024-02-16 07:16:19

品牌	Logo	应用领域
ASEMI		/
页数	文件大小	规格书
2页	86K
描述
6.0A Single-Phase Silicon Bridge Rectifier

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技术参数
数据手册

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KBU6M 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	unknown	风险等级：	5.76
湿度敏感等级：	1	Base Number Matches：	1

KBU6M 数据手册

KBU6A thru KBU6M

6.0 A Single-Phase Silicon Bridge Rectifier

Rectifier Reverse Voltage 50 to 1000V

6.8 0.2

23.2 0.5

3.85 0.25

4.4 0.2

1.95 0.25

17.3 0.5

Features

19.3

Ideal for P.C. Board mounting

1.9 R. TYP.

(2PLACES)

MAX.

High surge current capability

10.8 0.5

This series is UL listed under the Recognized

Component Index, file number E142814

The plastic material used carries Underwriters

Laboratory flammability recognition 94V-0

High temperature soldering guaranteed 265 C /10

seconds at 5 lbs (2.3kg) tension

4.9 0.2

25.4

MIN.

Mechanical Data

Case: Molded plastic body

Terminals: Plated leads solderable per MIL-STD-202,

Method 208

Polarity: Polarity symbols molded on body

5.1 0.5

5.6 0.5

+ 0

0.1

1.3

Mounting Position:: Any

Mounting Torque: 5 in-lbs max.

Weight: 0.3 ounce, 8.0 grams (approx)

Dimensions in millimeters(1mm =0.0394")

Maximum Ratings & Thermal Characteristics

Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.

For Capacitive load derate current by 20%.

KBU6A KBU6B KBU6D KBU6GKBU6J KBU6K KBU6M

Parameter

Symbol

VRRM

VRMS

VDC

unit

Maximum repetitive peak reverse voltage

Maximum RMS bridge input voltage

Maximum DC blocking voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

100

1000

Maximum average forward rectified

output current at Tc=100 C

IF(AV)

6.0

Peak forward surge current single sine-wave

superimposed on rated load (JEDEC Method)

250

IFSM

I²t

²sec

300

2.7

Rating for fusing ( t<8.3ms)

C / W

Typical thermal resistance per element(1)

ReJA

TJ,

TSTG

Operating junction and storage temperature

range

-55 to + 150

Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.

For Capacitive load derate by 20 %.

Parameter

Symbol

Unit

KBU6A KBU6B KBU6D KBU6G KBU6J KBU6K KBU6M

1.1

Maximum instantaneous forward voltage drop

per leg at 6.0A

500

Maximum DC reverse current at rated TA =25 C

DC blocking voltage per element

TA =125 C

Notes: (1)Thermal resistance from Junction to Ambemton P.C.board mounting.

www.asemi.tw

中文翻译

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与KBU6M相关器件

型号	品牌	获取价格	描述	数据表
KBU6M/1	VISHAY	获取价格	Bridge Rectifier Diode, 6A, 1000V V(RRM),
KBU6M/1-E4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti
KBU6M/51	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon, PLASTIC, CASE KBU, 4 PIN
KBU6M/51-E4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti
KBU6M/72-E4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti
KBU6M1	VISHAY	获取价格	6A, 1000V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN
KBU6M1-E4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti
KBU6ME4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBU, 4 PIN, B
KBU6M-E4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti
KBU6MPT	CHENMKO	获取价格	SILICON BRIDGE RECTIFIER

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