Datasheet > KBU6M

KBU6M

更新时间： 2024-01-23 03:32:36

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2页	228K
描述
CURRENT 6.0 Amperes VOLTAGE 50 to 1000 Volts

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中文翻译

获取价格

技术参数
数据手册

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KBU6M 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	unknown	风险等级：	5.76
湿度敏感等级：	1	Base Number Matches：	1

KBU6M 数据手册

CURRENT 6.0 Amperes

VOLTAGE 50 to 1000 Volts

KBU6A THRU KBU6M

Features

· Diffused Junction

· Low Forward Voltage Drop, High Current Capability

· Surge Overload Rating to 250A Peak

· Ideal for Printed Circuit Board Applications

· Case to Terminal Isolation Voltage 1500V

· Plastic Material - UL Flammability

~ ~

Classification Rating 94V-0

Mechanical Data

· Case : Molded Plastic

· Terminals : Plated Leads Solderable per

MIL-STD-202, Method 208

· Polarity : As Marked on Case

· Mounting : Through Hole for #6 Screw

· Mounting Torque : 5.0 Inch-pounds Maximum

· Weight : 8.0 grams (approx.)

· Mounting Position : Any

K B U

Dim

Min

22.70

3.80

4.20

1.70

10.30

4.50

4.80

Max

Dim

Min

25.40

Max

23.70

4.10

4.70

2.20

11.30

6.80

5.80

19.30

17.80

7.10

16.80

6.60

4.70

1.20

5.20

1.30

· Marking : Type Number

All Dimens ions in mm

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

KBU

Symbols

Units

Peak Repetitive Reverse voltage

Working Peak Reverse voltage

DC Blocking voltage

RMM

RWM

100

200

140

400

600

420

800

560

1000

700

Volts

RMS Reverse voltage

RMS

280

6.0

Volts

Average Rectified Output Current @ T

C=100

Amps

℃

Non-Repetitive Peak Forward Surge Current,

8.3ms single half-sine-wave superimposed

on rated load (JEDEC method)

FSM

200

Amps

VFM

1.0

Volts

Forward voltage (per element)

@ IF=3.0 A

@ T

=25℃

=100℃

1.0

μA

Peak Reverse Current at Rated

DC Blocking voltage

@ T

I²t Rating for Fusing (Note 2)

I²t

RθJA

166

A²

Typical Thermal Resistance,

Junction to Case (Note 1)

6.3

℃/W

STG

Operating and Storage Temperature Range

-65 to +150

℃

Notes:

(1) Thermal resistance junction to case mounted on heat sink.

(2) Non-repetitive, for t > 1.0ms and t < 8.3ms.

中文翻译

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与KBU6M相关器件

型号	品牌	获取价格	描述	数据表
KBU6M/1	VISHAY	获取价格	Bridge Rectifier Diode, 6A, 1000V V(RRM),
KBU6M/1-E4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti
KBU6M/51	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon, PLASTIC, CASE KBU, 4 PIN
KBU6M/51-E4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti
KBU6M/72-E4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti
KBU6M1	VISHAY	获取价格	6A, 1000V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN
KBU6M1-E4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti
KBU6ME4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBU, 4 PIN, B
KBU6M-E4	VISHAY	获取价格	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti
KBU6MPT	CHENMKO	获取价格	SILICON BRIDGE RECTIFIER

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