5秒后页面跳转
KBU606 PDF预览

KBU606

更新时间: 2024-02-22 16:13:58
品牌 Logo 应用领域
ASEMI /
页数 文件大小 规格书
2页 81K
描述
6.0A Single-Phase Silicon Bridge Rectifier

KBU606 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.69
其他特性:HIGH RELIABILITY, UL RECOGNIZED最小击穿电压:600 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
最大非重复峰值正向电流:250 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:600 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

KBU606 数据手册

 浏览型号KBU606的Datasheet PDF文件第2页 
KBU6005 thru KBU610  
6.0 A Single-Phase Silicon Bridge Rectifier  
Rectifier Reverse Voltage 50 to 1000V  
+
6.8 0.2  
+
23.2 0.5  
+
3.85 0.25  
+
4.4 0.2  
+
1.95 0.25  
Features  
+
17.3 0.5  
Ideal for P.C. Board mounting  
19.3  
High surge current capability  
MAX.  
1.9 R. TYP.  
(2PLACES)  
This series is UL listed under the Recognized  
Component Index, file number E142814  
The plastic material used carries Underwriters  
Laboratory flammability recognition 94V-0  
High temperature soldering guaranteed 265 C /10  
seconds at 5 lbs (2.3kg) tension  
+
_
10.8 0.5  
~
+
~
+
4.9 0.2  
25.4  
MIN.  
Mechanical Data  
Case: Molded plastic body  
Terminals: Plated leads solderable per MIL-STD-202,  
Method 208  
Polarity: Polarity symbols molded on body  
+
5.1 0.5  
+
5.6 0.5  
Mounting Position:: Any  
+ 0  
0.1  
1.3  
Mounting Torque: 5 in-lbs max.  
Weight: 0.3 ounce, 8.0 grams (approx)  
Dimensions in millimeters =0.0394")  
Maximum Ratings & Thermal Characteristics  
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.  
For Capacitive load derate current by 20%.  
KBU  
6005  
KBU  
601  
KBU  
602  
KBU KBU KBU  
KBU  
610  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
unit  
604  
400  
606  
600  
608  
800  
V
Maximum repetitive peak reverse voltage  
Maximum RMS bridge input voltage  
Maximum DC blocking voltage  
50  
35  
50  
100  
200  
140  
200  
1000  
70  
280  
400  
420  
600  
560  
800  
700  
V
V
100  
1000  
Maximum average forward rectified  
output current at TA=100 C  
6.0  
IF(AV)  
A
Peak forward surge current single sine-wave  
superimposed on rated load (JEDEC Method)  
250  
A
IFSM  
I2 t  
2sec  
A
300  
2.7  
Rating for fusing ( t<8.3ms)  
C / W  
Typical thermal resistance per element(1)  
ReJA  
TJ,  
TSTG  
Operating junction and storage temperature  
range  
-55 to + 150  
Electrical Characteristics  
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.  
For Capacitive load derate by 20 %.  
KBU  
602  
KBU  
604  
KBU  
608  
KBU  
601  
KBU  
6005  
KBU  
606  
KBU  
610  
Parameter  
Symbol  
Unit  
Maximum instantaneous forward voltage drop  
per leg at 6.0A  
1.1  
VF  
V
A
10  
500  
Maximum DC reverse current at rated TA =25 C  
IR  
DC blocking voltage per element  
TA =125 C  
Notes: (1)Thermal resistance from Junction to Ambemton P.C.board mounting.  
www.asemi.tw  
.

与KBU606相关器件

型号 品牌 获取价格 描述 数据表
KBU606G WTE

获取价格

6.0A GLASS PASSIVATED BRIDGE RECTIFIER
KBU606G TSC

获取价格

Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers
KBU606G HY

获取价格

GLASS PASSIVATED BRIDGE RECTIFIERS
KBU606G SURGE

获取价格

Bridge Rectifier Diode, CASE 22, 4 PIN
KBU606G GOOD-ARK

获取价格

SINGLE PHASE 6.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS
KBU606G WON-TOP

获取价格

Single In-Line
KBU606-G COMCHIP

获取价格

Silicon Bridge Rectifiers
KBU606G-LF SURGE

获取价格

Bridge Rectifier Diode,
KBU606G-LF WTE

获取价格

暂无描述
KBU606-RS605-KBU6J PINGWEI

获取价格

SINGLE-PHASE SILICON BRIDGE RECTIFIER