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KBU4G

更新时间: 2024-11-12 19:48:23
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 118K
描述
Bridge Rectifier Diode, 1 Phase, 4A, 400V V(RRM), Silicon, KBU, 4 PIN

KBU4G 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:R-PSFM-W4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.21
Is Samacsys:N其他特性:UL RECOGNIZED
最小击穿电压:400 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-W4JESD-609代码:e0
最大非重复峰值正向电流:150 A元件数量:4
相数:1端子数量:4
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

KBU4G 数据手册

 浏览型号KBU4G的Datasheet PDF文件第2页浏览型号KBU4G的Datasheet PDF文件第3页 
K B U 4A  
THRU  
M C C  
 ꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponent  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
KBU4M  
Features  
Low Leakage and Low Forward Voltage  
Silver Plated Copper Leads  
Any Mounting Position  
4Amp Single Phase  
Bridge Rectifier  
50 to 1000 Volts  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix  
designates RoHS Compliant. See ordering information)  
KBU  
A
Maximum Ratings  
D
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
UL Recognized File # E165989  
E
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
C
B
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
C
A
-
+
KBU4A  
KBU4B  
KBU4D  
KBU4G  
KBU4J  
KBU4K  
KBU4M  
KBU4A  
KBU4B  
KBU4D  
KBU4G  
KBU4J  
KBU4K  
KBU4M  
35V  
70V  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
F
1000V  
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
Peak Forward Surge  
Current  
IF(AV)  
4 A  
T = 100°C  
c
J
K
IFSM  
150A  
8.3ms, half sine  
L
Maximum Forward  
Voltage Drop Per  
Element  
VF  
1.0V  
IFM = 2.0A;  
TJ = 25°C (Note 2)  
DIMENSIONS  
INCHES  
MIN  
.895  
.600  
.740  
MM  
DIM  
A
B
C
D
E
F
G
MAX  
.935  
MIN  
22.7  
MAX  
NOTE  
23.7  
17.8  
19.8  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
.700  
.780  
.23L  
16.8  
18.8  
3.8∅  
NOM  
HOLE  
NOM  
IR  
10µA  
100mA  
TA = 25°C  
Tc = 100°C  
5.7L  
7.5  
---  
.15∅  
x
x
---  
.100  
.048  
.300  
--  
.052  
---  
25.4  
1.2  
1.3  
J
K
L
.268  
---  
.180  
.280  
.140  
.220  
6.8  
---  
4.6  
7.1  
5.3  
5.6  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
NOM  
3PL  
2. Pulse Test: Pulse Width 300usec, Duty Cycle 1%  
www.mccsemi.com  
1 of 3  
Revision: 4  
2008/01/30  

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