5秒后页面跳转
KBU4B PDF预览

KBU4B

更新时间: 2024-11-27 22:39:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管IOT局域网
页数 文件大小 规格书
4页 61K
描述
4.0 Ampere Silicon Bridge Rectifiers

KBU4B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R7, 4 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.09
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSFM-W4
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:6.6 W认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBU4B 数据手册

 浏览型号KBU4B的Datasheet PDF文件第2页浏览型号KBU4B的Datasheet PDF文件第3页浏览型号KBU4B的Datasheet PDF文件第4页 
Discr ete P OWER & Sign a l  
Tech n ologies  
KBU4A - KBU4M  
0.935(23.7)  
0.280(7.1)  
0.895(22.7)  
0.260(6.6)  
0.16(4.1)  
0.14(3.6)  
0.085(2.2)  
0.065(1.7)  
Features  
45°  
+
0.70(17.8)  
+
0.66(16.8)  
High surge current capability.  
Reliable construction technique.  
Ideal for printed circuit board.  
0.0760(19.3)  
MAX  
0.455(11.3)  
0.405(10.3)  
~
~
+
0.165(4.2)  
0.150(3.8)  
1.0(2.54)  
KBU  
MIN  
0.260(6.8)  
0.180(4.5)  
0.220(5.6)  
0.180(4.6)  
0.052(1.3)  
0.048(1.2)  
4.0 Ampere Silicon Bridge Rectifiers  
Dimensions are in: inches (mm)  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
Average Rectified Current  
4.0  
A
@ T = 50 C  
°
A
Peak Forward Surge Current  
200  
A
if(surge)  
PD  
Total Device Dissipation  
6.6  
53  
19  
W
mW/ C  
°
C/W  
Derate above 25 C  
°
Thermal Resistance, Junction to Ambient,** per leg  
Thermal Resistance, Junction to Lead,** per leg  
Storage Temperature Range  
Rθ  
°
JA  
4.0  
Rθ  
C/W  
°
JL  
-55 to +150  
-55 to +150  
C
C
°
Tstg  
TJ  
Operating Junction Temperature  
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
**Device mounted on PCB with 0.375 " (9.5 mm) lead length and 0.5 x 0.5" (13 x 13 mm) copper pads.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
4A  
50  
35  
50  
4B  
100  
70  
4D  
200  
140  
200  
4G  
400  
280  
400  
4J  
4K  
4M  
Peak Repetitive Reverse Voltage  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum RMS Bridge Input Voltage  
100  
1000  
DC Reverse Voltage  
(Rated VR)  
Maximum Reverse Leakage,  
total bridge @ rated VR TA = 25°C  
TA = 100°C  
5.0  
500  
µA  
µA  
Maximum Forward Voltage Drop,  
per bridge  
@ 4.0 A  
1.0  
V
KBU4A-KBU4M, Rev.  
A
1998 Fairchild Semiconductor Corporation  

KBU4B 替代型号

型号 品牌 替代类型 描述 数据表
KBU4B-E4 VISHAY

功能相似

DIODE 4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Rectif
KBU4B-E4/51 VISHAY

功能相似

RECTIFIER BRIDGE 4A 100V KBU
KBU4B DIOTEC

功能相似

Silicon-Bridge Rectifiers

与KBU4B相关器件

型号 品牌 获取价格 描述 数据表
KBU4B/51 VISHAY

获取价格

Bridge Rectifier Diode, 1 Phase, 4A, 100V V(RRM), Silicon, PLASTIC, CASE KBU, 4 PIN
KBU4B/51-E4 VISHAY

获取价格

DIODE 4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Rectif
KBU4B/72 VISHAY

获取价格

Bridge Rectifier Diode, 1 Phase, 4A, 100V V(RRM), Silicon, PLASTIC, CASE KBU, 4 PIN
KBU4BE4 VISHAY

获取价格

DIODE 4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBU, 4 PIN, Br
KBU4BE4 GOOD-ARK

获取价格

Bridge Rectifier Diode, 4A, 100V V(RRM),
KBU4B-E4 VISHAY

获取价格

DIODE 4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Rectif
KBU4B-E4/51 VISHAY

获取价格

RECTIFIER BRIDGE 4A 100V KBU
KBU4BP MCC

获取价格

Bridge Rectifier Diode, 1 Phase, 4A, 100V V(RRM), Silicon, KBU, 4 PIN
KBU4D PANJIT

获取价格

SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)
KBU4D GOOD-ARK

获取价格

SINGLE-PHASE SILICON BRIDGE