5秒后页面跳转
KBU4AP PDF预览

KBU4AP

更新时间: 2024-11-28 19:48:23
品牌 Logo 应用领域
美微科 - MCC 局域网二极管
页数 文件大小 规格书
3页 118K
描述
Bridge Rectifier Diode, 1 Phase, 4A, 50V V(RRM), Silicon, KBU, 4 PIN

KBU4AP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:KBU, 4 PIN
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.34其他特性:UL RECOGNIZED
最小击穿电压:50 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-W4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:4相数:1
端子数量:4最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:50 V
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBU4AP 数据手册

 浏览型号KBU4AP的Datasheet PDF文件第2页浏览型号KBU4AP的Datasheet PDF文件第3页 
K B U 4A  
THRU  
M C C  
 ꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponent  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
KBU4M  
Features  
Low Leakage and Low Forward Voltage  
Silver Plated Copper Leads  
Any Mounting Position  
4Amp Single Phase  
Bridge Rectifier  
50 to 1000 Volts  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix  
designates RoHS Compliant. See ordering information)  
KBU  
A
Maximum Ratings  
D
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
UL Recognized File # E165989  
E
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
C
B
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
C
A
-
+
KBU4A  
KBU4B  
KBU4D  
KBU4G  
KBU4J  
KBU4K  
KBU4M  
KBU4A  
KBU4B  
KBU4D  
KBU4G  
KBU4J  
KBU4K  
KBU4M  
35V  
70V  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
F
1000V  
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
Peak Forward Surge  
Current  
IF(AV)  
4 A  
T = 100°C  
c
J
K
IFSM  
150A  
8.3ms, half sine  
L
Maximum Forward  
Voltage Drop Per  
Element  
VF  
1.0V  
IFM = 2.0A;  
TJ = 25°C (Note 2)  
DIMENSIONS  
INCHES  
MIN  
.895  
.600  
.740  
MM  
DIM  
A
B
C
D
E
F
G
MAX  
.935  
MIN  
22.7  
MAX  
NOTE  
23.7  
17.8  
19.8  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
.700  
.780  
.23L  
16.8  
18.8  
3.8∅  
NOM  
HOLE  
NOM  
IR  
10µA  
100mA  
TA = 25°C  
Tc = 100°C  
5.7L  
7.5  
---  
.15∅  
x
x
---  
.100  
.048  
.300  
--  
.052  
---  
25.4  
1.2  
1.3  
J
K
L
.268  
---  
.180  
.280  
.140  
.220  
6.8  
---  
4.6  
7.1  
5.3  
5.6  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
NOM  
3PL  
2. Pulse Test: Pulse Width 300usec, Duty Cycle 1%  
www.mccsemi.com  
1 of 3  
Revision: 4  
2008/01/30  

与KBU4AP相关器件

型号 品牌 获取价格 描述 数据表
KBU4B SECOS

获取价格

VOLTAGE 50V ~ 1000V 4.0 AMP Glass Passivated Bridge Rectifiers
KBU4B RFE

获取价格

BRIDGE RECTIFIERS 3.0 to 6.0 Amps
KBU4B YANGJIE

获取价格

Bridge Rectifier Diode, 4A, 100V V(RRM),
KBU4B DAESAN

获取价格

CURRENT 4.0 Amperes VOLTAGE 50 to 1000 Volts
KBU4B FAIRCHILD

获取价格

4.0 Ampere Silicon Bridge Rectifiers
KBU4B NJSEMI

获取价格

Diode Rectifier Bridge Single 100V 4A 4-Pin Case KBU Bulk
KBU4B VISHAY

获取价格

SINGLE-PHASE BRIDGE RECTIFIER
KBU4B PANJIT

获取价格

SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)
KBU4B GOOD-ARK

获取价格

SINGLE-PHASE SILICON BRIDGE
KBU4B SEMTECH

获取价格

4.0A/6.0A/8.0A SINGLE - PHASE SILICON BRIDGE