Datasheet > KBR10T45SP5

KBR10T45SP5

更新时间： 2024-06-27 12:13:37

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科信 - KEXIN		/
页数	文件大小	规格书
2页	858K
描述
Schottky Diodes

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中文翻译

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数据手册

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KBR10T45SP5 数据手册

SMD Type

Diodes

Schottky Diodes

KBR10T45SP5

Unit:mm

TO-277B

0.048(1.20)

0.039(1.00)

■ Features

● High current capability

● Ultra low forward voltage drop

● Low power loss, high efficiency

● High surge capability

● High ESD capability

0.014(0.35)

0.009(0.25)

0.193(4.90)

0.181(4.60)

0.053(1.35)

0.045(1.15)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Recurrent Peak Reverse Voltage

RMS Voltage

Symbol

Rating

Unit

RRM

RMS

DC Blocking Voltage

FAV

Average Forward Rectified Current @ Tc = 100℃

Peak Forward Surge Current @ 8.3ms

Thermal Resistance Junction to Case

Junction Temperature

℃/W

℃

FSM

150

θJC

6.5

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

R= 100 uA

Min

Typ

Max Unit

Reverse breakdown voltage

= 5 A

0.45

0.6

Forward voltage

= 10 A

=30 V ,T

=25°C

0.25

Reverse voltage leakage current

Capacitance between terminals

=30 V ,T

=100°C

= 0 V, f= 1 MHz (Note.1)

700

Note.1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

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