KBPC8005 thru KBPC810
8.0 A Single-Phase Silicon Bridge Rectifier
Rectifier Reverse Voltage 50 to 1000V
12.7
Typical
+
Features
DIA
0.2
3.8
This series is SGS listed under the Recognized
Component Index, file number CANEC1217819001
High temperature metallurgically bonded
internal rectifiers
+
19.05
0.51
+
1.02
6.35
Typical IR less than .1 A
The plastic material used carries Underwriters Laboratory
flammability recognition 94V-0
+
1.02
6.35
High temperature soldering guaranteed 265 /10
seconds at 5 lbs (2.3kg) tension
1.27
Typical
MIN
22.2
Mechanical Data
Case: Voil-free plastic package
+
Terminals: Plated leads solderable per MIL-STD-202,
Method 208
Mounting: Thru hole for #6 screw
Mounting position: Any
0.65
6.95
+
19.05
0.51
Weight: 0.24 ounce, 6.9 grams (approx)
Dimensions in millimeters(1mm =0.0394")
Maximum Ratings & Thermal Characteristics
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.
For Capacitive load derate current by 20%.
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Parameter
Symbol
VRRM
VRMS
VDC
unit
8005
50
801
100
802
200
804
400
806
600
808
800
810
V
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
Maximum average forward
1000
35
50
70
140
200
280
400
420
600
560
800
700
V
V
100
1000
Tc = 50 (1) IF(AV)
A
8.0
rectified output current
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
125
A
IFSM
I2 t
2sec
A
Rating for fusing ( t<8.3ms)
10
9.4
55
C / W
pF
Typical thermal resistance per element(2)
Typical junction capacitance per element(3)
ReJA
Cj
TJ,
TSTG
Operating junction and storage temperature
range
-55 to + 150
Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.
For Capacitive load derate by 20 %.
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Parameter
Symbol
Unit
V
8005
801
802
804
806
808
810
Maximum instantaneous forward voltage drop
per leg at 4.0A
1.1
VF
10
1000
Maximum DC reverse current at rated TA =25 C
A
IR
DC blocking voltage per element
TA =100 C
Notes: (1)Mounted on metal chassis.
(2)Non-repetitive, for t>1ms and < 8.3ms.
(3)Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
.