Datasheet > KBPC8005

KBPC8005

更新时间： 2024-09-23 04:45:19

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描述
CURRENT 8.0 Amperes VOLTAGE 50 to 1000 Volts

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中文翻译

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数据手册

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KBPC8005 数据手册

CURRENT 8.0 Amperes

VOLTAGE 50 to 1000 Volts

KBPC8005 THRU KBPC810

Features

· Diffused Junction

· High Current Capability

· Surge Overload Rating to 125A Peak

· High Case Dielectric Strength of 1500V

· Ideal for Printed Circuit Board Applications

· Plastic Material - UL Flammability Classification 94V-0

K B P C -8

Min

Dim

Max

19.56

7.60

18.54

6.35

Mechanical Data

22.20

1.27 Typical

· Case : Molded Plastic

· Terminals : Plated Leads Solderable per

MIL-STD-202, Method 208

5.33

7.37

4.00

3.60

12.70 Typical

2.38 X 45^oTypical

· Polarity : Marked on Body

· Mounting : Through Hole for #6 Screw

· Mounting Torque : 5.0 Inch-pounds Maximum

· Weight : 5.4 grams (approx.)

· Marking : Type Number

All Dimens ions in mm

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

KBPC KBPC KBPC KBPC KBPC KBPC KBPC

Symbols

Units

8005

801

100

802

200

140

804

806

600

420

808

800

560

810

1000

700

Peak Repetitive Reverse voltage

Working Peak Reverse voltage

DC Blocking voltage

RMM

RWM

400

Volts

RMS Reverse voltage

R(RMS)

280

Volts

@ T

=50℃

Average Rectified

Output Current

(Note 1)

(Note 2)

8.0

6.0

Amps

@ T

Non-Repetitive Peak Forward Surge Current,

8.3ms single half-sine-wave superimposed

on rated load (JEDEC method)

FSM

125

Amps

Volts

1.1

Forward voltage (per element)

@ IF=4.0 A

μA

@ T

=25℃

=100℃

1.0

Peak Reverse Current at Rated

DC Blocking voltage (per element)

@ TC

I²t Rating for Fusing (t<8.3ms) (Note 3)

Typical Junction Capacitance (Note 4)

I²t

A²

100

Typical Thermal Resistance,

Junction to Case (per element)

9.4

℃/W

RθJA

STG

Operating and Storage Temperature Range

-65 to +125

℃

Notes:

(1) Mounted on metal chassis.

(2) Mounted on PC board FR-4 material.

(3) Non-repetitive, for t > 1.0ms and < 8.3ms.

(4) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

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