Datasheet > KBPC608

KBPC608

更新时间： 2024-01-02 01:48:19

品牌	Logo	应用领域
DIOTECH		二极管局域网
页数	文件大小	规格书
2页	959K
描述
SINGLE PHASE SILICON BRIDGE RECTIFIER

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中文翻译

获取价格

技术参数
数据手册

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KBPC608 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84

KBPC608 数据手册

KBPC6005 THRU KBPC610

SINGLE PHASE SILICON BRIDGE RECTIFIER

Reverse Voltage - 50 to 1000 Volts

Forward Current - 6.0 Ampere

FEATURES

KBPC6

●

Diffused Junction

.276(7.0)

.236(6.0)

●

Surge overload rating: 125A peak

.750

(19.0)

MIN

.042(1.07)

DIA.

.038(0.97)

HOLE FOR

NO.6 SCREW

.620(15.7)

.580(14.7)

MECHANICAL DATA

●

Case: UL-94 Class V-0 recognized Flame Retardant Epoxy

●

Terminals

Plated leads solderable per

MIL-STD 202, method 208

.445(11.3)

.405(10.3)

.620(15.7)

.580(14.7)

●

Mounting Position: Any

Marking: Type Number

.445(11.3)

.405(10.3)

Polarity shown on side of case, Positive lead by beveled corner.

Dimensions in inches and (milimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

KBPC KBPC KBPC KBPC KBPC KBPC KBPC

Characteristic

Symbol

Unit

6005

601

100

602

200

140

604

606

600

420

608

800

560

610

1000

700

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

RWM

400

R(RMS)

RMS Reverse Voltage

280

6.0

Average Rectified Output Current (Note 1) @T_C= 50°C

I^O

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

FSM

125

1.1

Forward Voltage per leg

@I_F= 3.0A

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

500

I^R

µA

I²t Rating for Fusing (t<8.3ms) (Note 2)

Typical Junction Capacitance (Note 3)

I²^t

C^j

A²s

Typical Thermal Resistance per leg (Note 1)

Operating and Storage Temperature Range

9.5

°C/W

°C

T^j, T^STG

-65 to +125

Note: 1. Mounted on metal chassis.

2. Non-repetitive, for t > 1ms and < 8.3ms.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

中文翻译

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