Datasheet > KBP202

KBP202

更新时间： 2024-11-20 22:47:43

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上华 - COMCHIP		二极管
页数	文件大小	规格书
3页	139K
描述
Silicon Bridge Rectifiers

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中文翻译

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数据手册

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KBP202 数据手册

Silicon Bridge Rectifiers

CCOOMMCCHHIIPP

www.comchiptech.com

KBP200 Thru 2010

Reverse Voltage: 50 - 1000 Volts

Forward Current: 2.0 Amp

KBP

Features

Diffused Junction

KBP

Min

14.22

10.67

15.20

4.57

Low Forward Voltage Drop

High Current Capability

High Reliability

Dim

Max

15.24

11.68

High Surge Current Capability

Ideal for Printed Circuit Boards

5.08

4.10

2.67

0.86

3.60

2.16

0.76

1.52

Mechanical Data

Case: Molded Plastic

11.68

12.70

3.2 X 45° Typical

12.70

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Weight: 1.7 grams (approx.)

Mounting Position: Any

All Dimensions in mm

Marking: Type Number

Maximum Ratings and Electrical Characterics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

KBP

200

KBP

201

KBP

202

KBP

204

KBP

206

KBP

208

KBP

2010

CHARACTERISTICS

Symbol

UNIT

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

420

800

560

1000

700

V_R(RMS)

RMS Reverse Voltage

280

2.0

Average Rectified Output Current @ T_A= 50°C (Note

I_O

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rate load

(JEDEC Method)

I_FSM

Forward Voltage (per element) @I_F= 2.0A

V_FM

I_RM

1.1

500

Peak Reverse Current

@T_A= 25°C

At Rated DC Blocking Voltage @T_A= 100°C

I²t

A²s

Rating for Fusing (t<8.3ms)

Typical Junction Capacitance per element (Note 2)

Typical Thermal Resistance (Note 3)

K/W

°C

Tj, T_STG

-55 to +160

Operating and Storage Temperature Range

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance junction to ambient mounted on PC board with 12mm²copper pad.

MDS0306002A

Page 1

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