Datasheet > 二极管 > 桥式整流二极管> KBP2010G-LF

KBP2010G-LF

更新时间： 2024-11-25 12:59:31

品牌	Logo	应用领域
WTE		整流二极管桥式整流二极管
页数	文件大小	规格书
4页	48K
描述
Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBPM, SIP-4

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中文翻译

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数据手册

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KBP2010G-LF 数据手册

WTE

POWER SEMICONDUCTORS

KBP200 – KBP2010

2.0A SINGLE-PHASE BRIDGE RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

Recognized File # E157705

KBP

Min

Dim

Max

15.24

11.68

—

14.22

10.67

15.20

4.57

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

5.08

4.10

1.40

0.86

—

3.60

Mechanical Data

1.00

0.76

Case: KBP, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

1.52

11.68

12.7

12.70

—

3.2 x 45° Typical

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

KBP

200

KBP

201

KBP

202

KBP

204

KBP

206

KBP

208

KBP

2010

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

2.0

Average Rectified Output Current

@T_A= 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage per leg

@I_F= 2.0A

V^FM

I^RM

1.1

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

500

µA

Rating for Fusing (t<8.3ms)

I²^t

C^j

A²s

Typical Junction Capacitance per leg (Note 1)

Typical Thermal Resistance per leg (Note 2)

Operating and Storage Temperature Range

R^ꢀ^JA

R^ꢀ^JL

°C/W

°C

T^j,T^STG

-55 to +165

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Mounted on PC board with 12mm²copper pad.

KBP200 – KBP2010

1 of 4

12 3 4

中文翻译

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与KBP2010G-LF相关器件

型号	品牌	获取价格	描述	数据表
KBP2010GP	CHENMKO	获取价格	Bridge Rectifier Diode,
KBP2010-LF	WTE	获取价格	Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBP,
KBP2010PT	CHENMKO	获取价格	SILICON BRIDGE RECTIFIER
KBP201G	HY	获取价格	GLASS PASSIVATED BRIDGE RECTIFIERS
KBP201G	FRONTIER	获取价格	2A GLASS PASSIVATED BRIDGE RECTIFIER
KBP201G	WILLAS	获取价格	2.0 AMP GLASS PASSIVATED BRIDGE RECTIFIER KBP PACKAGE
KBP201G	LGE	获取价格	Single Phase 2.0AMP. Glass Passivatec Bridge Rectifiers
KBP201G	GULFSEMI	获取价格	SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current:2.0A
KBP201G	TSC	获取价格	Single Phase 2.0 AMPS. Glass Passivated Bridge Rectifiers
KBP201G	DACHANG	获取价格	Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 2.0A

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