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KBP2010-G PDF预览

KBP2010-G

更新时间: 2024-01-10 07:49:49
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管
页数 文件大小 规格书
3页 139K
描述
Rectifier Diode,

KBP2010-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PSIP-W4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.69
其他特性:HIGH RELIABILITY, UL RECOGNIZED最小击穿电压:1000 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSIP-W4
湿度敏感等级:2最大非重复峰值正向电流:60 A
元件数量:4相数:1
端子数量:4最高工作温度:165 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBP2010-G 数据手册

 浏览型号KBP2010-G的Datasheet PDF文件第2页浏览型号KBP2010-G的Datasheet PDF文件第3页 
Silicon Bridge Rectifiers  
CCOOMMCCHHIIPP  
www.comchiptech.com  
KBP200 Thru 2010  
Reverse Voltage: 50 - 1000 Volts  
Forward Current: 2.0 Amp  
KBP  
Features  
Diffused Junction  
KBP  
Min  
14.22  
10.67  
15.20  
4.57  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
Dim  
A
B
C
D
E
Max  
15.24  
11.68  
-
High Surge Current Capability  
Ideal for Printed Circuit Boards  
5.08  
4.10  
2.67  
0.86  
-
3.60  
G
H
I
2.16  
0.76  
1.52  
Mechanical Data  
Case: Molded Plastic  
J
K
L
11.68  
12.70  
3.2 X 45° Typical  
12.70  
-
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
All Dimensions in mm  
Marking: Type Number  
Maximum Ratings and Electrical Characterics  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBP  
200  
KBP  
201  
KBP  
202  
KBP  
204  
KBP  
206  
KBP  
208  
KBP  
2010  
CHARACTERISTICS  
Symbol  
UNIT  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
RMS Reverse Voltage  
280  
2.0  
V
A
Average Rectified Output Current @ TA = 50°C (Note  
1)  
IO  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rate load  
(JEDEC Method)  
IFSM  
60  
A
Forward Voltage (per element) @IF = 2.0A  
VFM  
IRM  
1.1  
10  
500  
V
Peak Reverse Current  
@TA = 25°C  
uA  
At Rated DC Blocking Voltage @TA = 100°C  
I2t  
Cj  
A2s  
pF  
Rating for Fusing (t<8.3ms)  
Typical Junction Capacitance per element (Note 2)  
Typical Thermal Resistance (Note 3)  
15  
25  
R
30  
K/W  
°C  
JA  
Tj, TSTG  
-55 to +160  
Operating and Storage Temperature Range  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.  
MDS0306002A  
Page 1  

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