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KBP2010 PDF预览

KBP2010

更新时间: 2024-02-29 16:06:34
品牌 Logo 应用领域
平盛电子 - PFS /
页数 文件大小 规格书
2页 94K
描述
2.0A BRIDGE RECTIFIER

KBP2010 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PSIP-W4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.69
其他特性:HIGH RELIABILITY, UL RECOGNIZED最小击穿电压:1000 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSIP-W4
湿度敏感等级:2最大非重复峰值正向电流:60 A
元件数量:4相数:1
端子数量:4最高工作温度:165 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBP2010 数据手册

 浏览型号KBP2010的Datasheet PDF文件第2页 
KBP200 – KBP2010  
2.0A BRIDGE RECTIFIER  
Features  
!
Diffused Junction  
!
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
UL Recognized File # E157705  
L
A
KBP  
Dim  
A
B
C
D
E
Min  
14.22  
10.67  
15.2  
4.57  
3.60  
2.16  
0.76  
1.52  
11.68  
12.7  
Max  
15.24  
11.68  
B
J
+
~
~
-
5.08  
4.10  
2.67  
0.86  
C
K
Mechanical Data  
!
!
G
H
I
Case: Molded Plastic  
H
I
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
J
12.7  
E
K
L
!
!
!
!
G
3.2 x 45° Typical  
D
All Dimensions in mm  
Marking: Type Number  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBP  
200  
KBP  
201  
KBP  
202  
KBP  
204  
KBP  
206  
KBP  
208  
KBP  
2010  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
2.0  
V
A
Average Rectified Output Current  
(Note 1)  
@TA = 50°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
60  
A
Forward Voltage (per element)  
@IF = 2.0A  
VFM  
IRM  
1.1  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
500  
µA  
Rating for Fusing (t<8.3ms)  
I2t  
Cj  
15  
25  
A2s  
pF  
Typical Junction Capacitance per element (Note 2)  
Typical Thermal Resistance (Note 3)  
RJA  
Tj, TSTG  
30  
K/W  
°C  
Operating and Storage Temperature Range  
-55 to +165  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.  
Web Site:  
WWW.PS-PFS.COM  

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