KBP200-KBP210
SILICON BRIDGE RECTIFIERS
VOLTAGE RANGE: 50 - 1000V
CURRENT: 2.0 A
Features
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Diffused Junction
KBP
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Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
UL Recognized File # E157705
0.71 (18.0)
0.63 (16.0)
0.825 (20.95)
0.605 (15.36)
AC AC
+
0.035 (0.89)
0.028 (0.71)
Mechanical Data
0.500 (12.7)
MIN.
0.16 (4.00)
0.14 (3.55)
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Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 1.7 grams (approx.)
Mounting Position: Any
0.276 (7.01 )
0.236 (5.99)
0.105 (2.66)
0.085 (2.16)
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Marking: Type Number
Dimensions in inches and ( millimeter )
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
KBP
200
KBP
201
KBP
202
KBP
204
KBP
206
KBP
208
KBP
210
Characteristic
Symbol
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
V
R
RMS Reverse Voltage
V
R(RMS)
280
2.0
V
A
Average Rectified Output Current
(Note 1)
I
O
@TA = 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
60
A
Forward Voltage (per element)
@IF = 2.0A
V
FM
1.1
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
10
500
I
RM
µA
Rating for Fusing (t<8.3ms)
I2
t
15
25
A2s
pF
Typical Junction Capacitance per element (Note 2)
Typical Thermal Resistance (Note 3)
C
j
R
ꢀJA
30
K/W
°C
Operating and Storage Temperature Range
T
j,
T
STG
-55 to +165
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.
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