5秒后页面跳转
KBP08 PDF预览

KBP08

更新时间: 2024-01-26 10:01:41
品牌 Logo 应用领域
SSE /
页数 文件大小 规格书
1页 17K
描述
SINGLE PHASE SILICON BRIDGE RECTIFIER

KBP08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PSIP-W4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.14
其他特性:HIGH RELIABILITY最小击穿电压:800 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSIP-W4
JESD-609代码:e3湿度敏感等级:2
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:800 V
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

KBP08 数据手册

  
SHANGHAI SUNRISE ELECTRONICS CO., LTD.  
KBP005 THRU KBP10  
TECHNICAL  
SPECIFICATION  
SINGLE PHASE SILICON  
BRIDGE RECTIFIER  
VOLTAGE: 50 TO 1000V  
CURRENT: 2.0A  
FEATURES  
KBP  
• Ideal for printed circuit board  
• Surge overload rating: 60 A peak  
• High case dielectric strength  
• High temperature soldering guaranteed:  
250oC/10sec/0.375"(9.5mm) lead length  
at 5 lbs tension  
MECHANICAL DATA  
• Terminal: Plated leads solderable per  
MIL-STD 202E, method 208C  
• Case: UL-94 Class V-O recognized flame  
retardant epoxy  
• Polarity: Polarity symbol marked on body  
• Mounting position: Any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,  
derate current by 20%)  
KBP KBP KBP KBP KBP KBP KBP  
RATINGS  
SYMBOL  
UNITS  
005 01  
02  
100 200 400 600 800 1000  
70 140 280 420 560 700  
04  
06  
08  
10  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
V
V
V
Maximum DC Blocking Voltage  
100 200 400 600 800 1000  
Maximum Average Forward Rectified Current  
(Ta=50oC)  
IF(AV)  
IFSM  
VF  
2.0  
A
A
V
Peak Forward Surge Current (8.3ms single  
half sine-wave superimposed on rated load)  
Maximum Instantaneous Forward Voltage  
(at forward current 2.0A DC)  
60  
1.1  
Ta=25oC  
Ta=100oC  
10.0  
500  
Maximum DC Reverse Current  
µA  
µA  
oC  
oC  
IR  
(at rated DC blocking voltage)  
-55 to +125  
-55 to +150  
TJ  
Operating Temperature Range  
Storage Temperature  
TSTG  
http://www.sse-diode.com  

与KBP08相关器件

型号 品牌 描述 获取价格 数据表
KBP08G FUJI 1.5 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER

获取价格

KBP08G DIODES 1.5A GLASS PASSIVATED BRIDGE RECTIFIER

获取价格

KBP08G GULFSEMI SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current:1.5A

获取价格

KBP08G HY GLASS PASSIVATED BRIDGE RECTIFIERS

获取价格

KBP08G NJSEMI Diode Rectifier Bridge Single 800V 1.5A 4-Pin Case KBP

获取价格

KBP08G(LS) DIODES 1.5A GLASS PASSIVATED BRIDGE RECTIFIER

获取价格