5秒后页面跳转
KBP02M PDF预览

KBP02M

更新时间: 2024-09-24 22:47:39
品牌 Logo 应用领域
WTE 整流二极管桥式整流二极管
页数 文件大小 规格书
3页 38K
描述
1.5A GLASS PASSIVATED BRIDGE RECTIFIER

KBP02M 数据手册

 浏览型号KBP02M的Datasheet PDF文件第2页浏览型号KBP02M的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
KBP005M – KBP10M  
1.5A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
L
A
KBP  
Min  
Dim  
A
B
C
D
E
Max  
15.24  
11.68  
B
J
14.22  
10.67  
15.2  
4.57  
3.60  
2.16  
0.76  
1.52  
11.68  
12.7  
+
~
~
-
5.08  
4.10  
2.67  
0.86  
C
K
Mechanical Data  
!
!
G
H
I
Case: Molded Plastic  
H
I
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
J
12.7  
E
K
L
!
!
!
!
G
3.2 x 45° Typical  
D
All Dimensions in mm  
Marking: Type Number  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBP  
005M  
KBP  
01M  
KBP  
02M  
KBP  
04M  
KBP  
06M  
KBP  
08M  
KBP  
10M  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.5  
V
A
Average Rectified Output Current  
(Note 1)  
@TA = 50°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
50  
A
Forward Voltage (per element)  
@IF = 1.5A  
VFM  
IRM  
1.1  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
500  
µA  
Rating for Fusing (t<8.3ms)  
I2t  
Cj  
10  
15  
A2s  
pF  
Typical Junction Capacitance per element (Note 2)  
Typical Thermal Resistance (Note 3)  
RJA  
Tj, TSTG  
28  
K/W  
°C  
Operating and Storage Temperature Range  
-55 to +150  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.  
KBP005M – KBP10M  
1 of 3  
© 2002 Won-Top Electronics  

与KBP02M相关器件

型号 品牌 获取价格 描述 数据表
KBP02M1 VISHAY

获取价格

1.5A, 200V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBPM, 4 PIN
KBP02M-E4 VISHAY

获取价格

DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBPM, 4 PIN,
KBP02MP MCC

获取价格

Bridge Rectifier Diode, 1 Phase, 1.5A, 200V V(RRM), Silicon, PLASTIC, KBPM, 4 PIN
KBP02RS203 SHUNYE

获取价格

SILICON BRIDGE RECTIFIERS
KBP02-RS203 PINGWEI

获取价格

SINGLE-PHASE SILICON BRIDGE RECTIFIER
KBP04 MIC

获取价格

SINGLE PHASE BRIDGE RECTIFIER
KBP04 CHENG-YI

获取价格

SINGLE-PHASE SILICON BRIDGE
KBP04 DAESAN

获取价格

CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts
KBP04 BL Galaxy Electrical

获取价格

SILICON BRIDGE RECTIFIERS
KBP04 GULFSEMI

获取价格

SINGLE PHASE SILICON BRIDGE RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A