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KBL607

更新时间: 2024-02-05 15:18:00
品牌 Logo 应用领域
DAESAN /
页数 文件大小 规格书
2页 227K
描述
CURRENT 6.0 Amperes VOLTAGE 50 to 1000 Volts

KBL607 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSIP-W4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.72
Is Samacsys:N其他特性:UL RECOGNIZED
最小击穿电压:1000 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSIP-W4
最大非重复峰值正向电流:175 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
最大重复峰值反向电压:1000 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:SINGLEBase Number Matches:1

KBL607 数据手册

 浏览型号KBL607的Datasheet PDF文件第2页 
CURRENT 6.0 Amperes  
VOLTAGE 50 to 1000 Volts  
KBL6005 THRU KBL607  
Features  
· High case dielectric Strength of 1500V  
· Low Forward Voltage Drop, High Current Capability  
· Surge Overload Rating to 250A Peak  
A
· Ideal for Printed Circuit Board Application  
· Plastic Material - UL Flammability Classification 94V-0  
B
-
+
H
C
K B L  
Mechanical Data  
Dim  
A
Min  
18.50  
15.40  
19.00  
6.20  
Max  
G
19.50  
16.40  
D
· Case : Molded Plastic  
· Terminals : Plated Leads, Solderable per  
MIL-STD-202, Method 208  
· Polarity : Symbols Marked on Case  
· Approx. Weight: 5.6 grams  
· Marking : Type Number  
B
C
E
D
6.50  
5.60  
2.00  
E
4.60  
G
1.50  
H
1.30 Typical  
All Dimens ions in mm  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
KBL  
6005  
KBL  
601  
KBL  
602  
KBL  
604  
KBL  
605  
KBL  
606  
KBL  
Symbols  
Units  
607  
Peak Repetitive Reverse voltage  
Working Peak Reverse voltage  
DC Blocking voltage  
V
V
V
RMM  
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
Volts  
R
RMS Reverse voltage  
V
RMS  
280  
6.0  
Volts  
Average Rectified Output Current @ T  
C
=75  
Io  
Amps  
Non-Repetitive Peak Forward Surge Current,  
8.3ms single half-sine-wave superimposed  
on rated load (JEDEC method)  
IFSM  
150  
Amps  
VFM  
1.1  
Volts  
Forward Voltage per element  
@ IF=3.0 A  
μA  
@ T  
C
=25℃  
10  
1.0  
Peak Reverse Current at Rated  
DC Blocking Voltage  
IR  
mA  
@ TC  
=100℃  
I2t Rating for Fusing (t<8.3ms) (Note 2)  
I2t  
166  
A2  
S
Typical Thermal Resistance,  
Junction to Case (Note 1)  
19  
/W  
RθJA  
T
STG  
j
Operating and Storage Temperature Range  
-40 to +150  
T
Notes:  
(1) Thermal Resistance from junction to case per element mounted on PC board with 13 x 13 x 0.03mm land areas.  
(2) Non-repetitive for t > 1ms and < 8.3ms.  

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