KBJ8B

更新时间： 2024-09-23 22:33:11

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
3页	50K
描述
8.0A BRIDGE RECTIFIER

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中文翻译

获取价格

数据手册

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KBJ8B 数据手册

WTE

POWER SEMICONDUCTORS

KBJ8A – KBJ8M

8.0A BRIDGE RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

KBJ-6

Dim

Min

29.7

19.7

4.7

Max

30.3

20.3

4.9

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ H

17.0

3.8

18.0

4.2

3.1Ø

2.3

3.4Ø

2.7

Mechanical Data

Case: Molded Plastic

0.9

1.1

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 4.0 grams (approx.)

Mounting Position: Any

2.0

2.4

0.6

0.7

4.4

4.8

3.4

—

9.8

10.2

7.7

Marking: Type Number

7.3

10.8

2.6

11.2

—

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol KBJ8A KBJ8B KBJ8D KBJ8G KBJ8J KBJ8K KBJ8M Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

8.0

Average Rectified Output Current @T_C= 75°C

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

200

1.1

Forward Voltage (per element)

@I_F= 8.0A

V^FM

I^R

Peak Reverse Current

@T_A= 25°C

200

µA

°C

At Rated DC Blocking Voltage

@T_C= 100°C

Operating and Storage Temperature Range

T^j,T^STG

-55 to +150

Note: 1. Device mounted on 7.5 x 7.5 x 0.8cm thick AL plate heatsink.

KBJ8A – KBJ8M

1 of 3

12 3

中文翻译

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