Datasheet > KBJ2004A

KBJ2004A

更新时间： 2024-09-28 15:18:35

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	222K
描述
4KBJ

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中文翻译

获取价格

数据手册

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KBJ2004A 数据手册

RoHS

KBJ20005A THRU KBJ2010A

Bridge Rectifiers

COMPLIANT

Features

● UL recognition, file #E230084

● Glass passivated chip junction

● Thin single in-line package

● High surge current capability

● Solder dip 275 °C max. 7 s, per JESD 22-B106

Typical Applications

General purpose use in AC/DC bridge full wave rectification

for switching power supply, home appliances, office

equipment, industrial automation applications.

Mechanical Data

●

ackage: 4KBJ

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

●

As marked on body

Polarity:

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

KBJ2001A KBJ2002A KBJ2004A KBJ2006A KBJ2008A KBJ2010A

PARAMETER

SYMBOL UNIT KBJ20005A

KBJ2001A KBJ2002A KBJ2004A KBJ2006A KBJ2008A KBJ2010A

Device marking code

KBJ20005A

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

RRM

RMS

Maximum DC blocking Voltage

100

1000

With heatsink

Average Rectified Output

Current

@60Hz sine wave, R-load

T =120℃

Without heatsink

2.4

=25℃

Forward Surge Current (Non-repetitive)

@60Hz Half-sine wave,1 cycle, Tj=25℃

Forward Surge Current (Non-repetitive)

300

FSM

I²t

600

@1ms, square wave, 1 cycle, Tj=25℃

Current squared time

@1ms≤t≤8.3ms Tj=25℃,rating of per diode

A²S

374

Storage temperature

Junction temperature

-55 ~ +150

stg

℃

Dielectric strength

@ Terminals to case, AC 1 minute

Mounting torque

@Recommend torque：5kgꞏcm

dis

Tor

kgꞏcm

（T =25℃Unless otherwise specified）

■Electrical Characteristics

KBJ2001A KBJ2002A KBJ2004A KBJ2006A KBJ2008A KBJ2010A

PARAMETER

SYMBOL

KBJ20005A

UNIT TEST CONDITIONS

Maximum instantaneous

forward voltage drop per diode

1.0

=10A

Maximum DC reverse current at

rated DC blocking voltage per

diode

T =25℃

μA

100

T =125℃

Measured at 1MHz

and Applied Reverse

Voltage of 4.0 V.D.C

Typical junction capacitance

1 / 4

S-B2928

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev. 1.0.22-Mar-23

12 3 4

中文翻译

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