Datasheet > KBJ1008A

KBJ1008A

更新时间： 2024-03-03 10:08:39

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	222K
描述
4KBJ

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数据手册

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KBJ1008A 数据手册

RoHS

KBJ10005A THRU KBJ1010A

Bridge Rectifiers

COMPLIANT

Features

● UL recognition, file #E230084

● Glass passivated chip junction

● Thin single in-line package

● High surge current capability

● Solder dip 275 °C max. 7 s, per JESD 22-B106

Typical Applications

General purpose use in AC/DC bridge full wave rectification

for switching power supply, home appliances, office equipment,

industrial automation applications.

Mechanical Data

●

ackage: 4KBJ

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

~ ~

●

As marked on body

Polarity:

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

KBJ10005A KBJ1001A KBJ1002A KBJ1004A KBJ1006A KBJ1008A KBJ1010A

SYMBOL UNIT

PARAMETER

KBJ10005A KBJ1001A KBJ1002A KBJ1004A KBJ1006A KBJ1008A KBJ1010A

Device marking code

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

RRM

RMS

Maximum DC blocking Voltage

100

1000

With heatsink

Average Rectified Output

Current

@60Hz sine wave, R-load

10.0

3.6

T =110℃

Without heatsink

=25℃

Forward Surge Current (Non-repetitive)

@60Hz Half-sine wave,1 cycle, Tj=25℃

Forward Surge Current (Non-repetitive)

220

440

FSM

I²t

@1ms, square wave, 1 cycle, Tj=25℃

Current squared time

A²S

201

@1ms≤t≤8.3ms Tj=25℃,rating of per diode

Storage temperature

Junction temperature

-55 ~ +150

stg

℃

Dielectric strength

@ Terminals to case, AC 1 minute

Mounting torque

@Recommend torque：5kgꞏcm

dis

Tor

kgꞏcm

（T =25℃ Unless otherwise specified）

■Electrical Characteristics

KBJ10005AKBJ1001AKBJ1002AKBJ1004AKBJ1006AKBJ1008AKBJ1010A

PARAMETER

SYMBOL

UNIT TEST CONDITIONS

Maximum instantaneous

forward voltage drop per

diode

1.0

=5.0A

Maximum DC reverse

current at rated DC blocking

voltage per diode

T =25℃

μA

100

T =125℃

Measured at 1MHz

and Applied

Reverse Voltage of

4.0 V.D.C

Typical junction capacitance

1 / 4

S-B1413

Rev. 1.1, 06-Apr-22

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4

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