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KBB05B400M-F4020 PDF预览

KBB05B400M-F4020

更新时间: 2024-11-21 20:10:27
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路
页数 文件大小 规格书
82页 1489K
描述
Memory Circuit, 16MX16, CMOS, PBGA80, 8 X 13 MM, 0.80 MM PITCH, FBGA-80

KBB05B400M-F4020 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:LFBGA,针数:80
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.84其他特性:NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16
JESD-30 代码:R-PBGA-B80长度:13 mm
内存密度:268435456 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16功能数量:1
端子数量:80字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:16MX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):3.1 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):2.9 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
宽度:8 mmBase Number Matches:1

KBB05B400M-F4020 数据手册

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Preliminary  
MCP MEMORY  
KBB0xB400M  
Document Title  
Multi-Chip Package MEMORY  
64M Bit (8M x8/4M x16) Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial Draft  
July 25, 2003  
Preliminary  
(64M NOR Flash M-die_rev1.1)  
(256M NAND Flash C-die_rev2.5)  
(64M UtRAM B-die_rev0.1)  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s web site.  
http://samsungelectronics.com/semiconductors/products/products_index.html  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
Revision 0.0  
- 1 -  
July 2003  

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