Datasheet > 存储 > 闪存> K9F5608U0B-PIB0

K9F5608U0B-PIB0

更新时间： 2024-11-25 22:18:31

品牌	Logo	应用领域
三星 - SAMSUNG		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
34页	602K
描述
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

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技术参数
数据手册

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K9F5608U0B-PIB0 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	TSSOP, TSSOP48,.8,20	Reach Compliance Code：	compliant
风险等级：	5.83	最长访问时间：	30 ns
命令用户界面：	YES	数据轮询：	NO
JESD-30 代码：	R-PDSO-G48	内存密度：	268435456 bit
内存集成电路类型：	FLASH	内存宽度：	8
部门数/规模：	2K	端子数量：	48
字数：	33554432 words	字数代码：	32000000
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	32MX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装等效代码：	TSSOP48,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小：	512 words	并行/串行：	PARALLEL
电源：	3.3 V	认证状态：	Not Qualified
就绪/忙碌：	YES	部门规模：	16K
最大待机电流：	0.00005 A	子类别：	Flash Memories
最大压摆率：	0.02 mA	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
切换位：	NO	类型：	NAND TYPE
Base Number Matches：	1

K9F5608U0B-PIB0 数据手册

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

FLASH MEMORY

Document Title

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Revision History

Revision No. History

Draft Date

Remark

0.0

Initial issue.

May. 15th 2001

Advance

0.1

At Read2 operation in X16 device

Sep. 20th 2001

: A3 ~ A7 are Don’t care ==> A3 ~ A7 are "L"

0.2

1. IOL(R/B) of 1.8V device is changed.

Nov. 5th 2001

-min. Value: 7mA -->3mA

-typ. Value: 8mA -->4mA

2. AC parameter is changed.

tRP(min.) : 30ns --> 25ns

3. WP pin provides hardware protection and is recommended to be kept

at VIL during power-up and power-down and recovery time of minimum

1ms is required before internal circuit gets ready for any command

sequences as shown in Figure 15.

---> WP pin provides hardware protection and is recommended to be

kept at VIL during power-up and power-down and recovery time of

minimum 10ms is required before internal circuit gets ready for any

command sequences as shown in Figure 15.

0.3

0.4

1. X16 TSOP1 pin is changed.

: #36 pin is changed from VccQ to N.C .

Feb. 15th 2002

Apr. 15th 2002

1. In X16 device, bad block information location is changed from 256th

byte to 256th and 261th byte.

2. tAR1, tAR2 are merged to tAR.(page 12)

(before revision) min. tAR1 = 20ns , min. tAR2 = 50ns

(after revision) min. tAR = 10ns

3. min. tCLR is changed from 50ns to 10ns.(page12)

4. min. tREA is changed from 35ns to 30ns.(page12)

5. min. tWC is changed from 50ns to 45ns.(page12)

6. Unique ID for Copyright Protection is available

-The device includes one block sized OTP(One Time Programmable),

which can be used to increase system security or to provide

identification capabilities. Detailed information can be obtained by

contact with Samsung.

7. tRHZ is divide into tRHZ and tOH.(page 12)

- tRHZ : RE High to Output Hi-Z

- tOH : RE High to Output Hold

8. tCHZ is divide into tCHZ and tOH.(page 12)

- tCHZ : CE High to Output Hi-Z

- tOH : CE High to Output Hold

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

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中文翻译

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与K9F5608U0B-PIB0相关器件

型号	品牌	获取价格	描述	数据表
K9F5608U0B-PIB00	SAMSUNG	获取价格	Flash, 32MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
K9F5608U0B-VCB0	SAMSUNG	获取价格	32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-VCB00	SAMSUNG	获取价格	Flash, 32MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48
K9F5608U0B-VIB0	SAMSUNG	获取价格	32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-VIB00	SAMSUNG	获取价格	Flash, 32MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48
K9F5608U0B-YCB0	SAMSUNG	获取价格	32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-YCB00	SAMSUNG	获取价格	Flash, 32MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F5608U0B-YIB0	SAMSUNG	获取价格	32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-YIB00	SAMSUNG	获取价格	Flash, 32MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F5608U0C	SAMSUNG	获取价格	512Mb/256Mb 1.8V NAND Flash Errata

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