K9F5608Q0B-HCB0

更新时间： 2024-11-24 22:06:51

品牌	Logo	应用领域
三星 - SAMSUNG		闪存
页数	文件大小	规格书
34页	602K
描述
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

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中文翻译

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数据手册

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K9F5608Q0B-HCB0 数据手册

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

FLASH MEMORY

Document Title

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Revision History

Revision No. History

Draft Date

Remark

0.0

Initial issue.

May. 15th 2001

Advance

0.1

At Read2 operation in X16 device

Sep. 20th 2001

: A3 ~ A7 are Don’t care ==> A3 ~ A7 are "L"

0.2

1. IOL(R/B) of 1.8V device is changed.

Nov. 5th 2001

-min. Value: 7mA -->3mA

-typ. Value: 8mA -->4mA

2. AC parameter is changed.

tRP(min.) : 30ns --> 25ns

3. WP pin provides hardware protection and is recommended to be kept

at VIL during power-up and power-down and recovery time of minimum

1ms is required before internal circuit gets ready for any command

sequences as shown in Figure 15.

---> WP pin provides hardware protection and is recommended to be

kept at VIL during power-up and power-down and recovery time of

minimum 10ms is required before internal circuit gets ready for any

command sequences as shown in Figure 15.

0.3

0.4

1. X16 TSOP1 pin is changed.

: #36 pin is changed from VccQ to N.C .

Feb. 15th 2002

Apr. 15th 2002

1. In X16 device, bad block information location is changed from 256th

byte to 256th and 261th byte.

2. tAR1, tAR2 are merged to tAR.(page 12)

(before revision) min. tAR1 = 20ns , min. tAR2 = 50ns

(after revision) min. tAR = 10ns

3. min. tCLR is changed from 50ns to 10ns.(page12)

4. min. tREA is changed from 35ns to 30ns.(page12)

5. min. tWC is changed from 50ns to 45ns.(page12)

6. Unique ID for Copyright Protection is available

-The device includes one block sized OTP(One Time Programmable),

which can be used to increase system security or to provide

identification capabilities. Detailed information can be obtained by

contact with Samsung.

7. tRHZ is divide into tRHZ and tOH.(page 12)

- tRHZ : RE High to Output Hi-Z

- tOH : RE High to Output Hold

8. tCHZ is divide into tCHZ and tOH.(page 12)

- tCHZ : CE High to Output Hi-Z

- tOH : CE High to Output Hold

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

12 3 4 5 6 7...34

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与K9F5608Q0B-HCB0相关器件

型号	品牌	获取价格	描述	数据表
K9F5608Q0B-HCB00	SAMSUNG	获取价格	Flash, 32MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9F5608Q0B-HIB0	SAMSUNG	获取价格	32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608Q0B-HIB00	SAMSUNG	获取价格	Flash, 32MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9F5608Q0C	SAMSUNG	获取价格	512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-D	SAMSUNG	获取价格	512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-DCB0	SAMSUNG	获取价格	512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-DCB00	SAMSUNG	获取价格	Flash, 32MX8, 35ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9F5608Q0C-DIB0	SAMSUNG	获取价格	512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-DIB00	SAMSUNG	获取价格	Flash, 32MX8, 35ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9F5608Q0C-GCB0	SAMSUNG	获取价格	Flash, 32MX8, 30ns, PBGA63,

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