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K9F2808U0A-YCB0 PDF预览

K9F2808U0A-YCB0

更新时间： 2024-01-05 22:16:12
品牌 Logo 应用领域
三星 - SAMSUNG 闪存内存集成电路光电二极管
页数 文件大小 规格书
26页 352K
描述
16M x 8 Bit NAND Flash Memory

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K9F2808U0A-YCB0 技术参数

生命周期：Obsolete零件包装代码：TSOP1
包装说明：12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48针数：48
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.81
Is Samacsys：N最长访问时间：35 ns
JESD-30 代码：R-PDSO-G48长度：18.4 mm
内存密度：134217728 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：48字数：16777216 words
字数代码：16000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：16MX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
类型：NAND TYPE宽度：12 mm
Base Number Matches：1

K9F2808U0A-YCB0 数据手册

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K9F2808U0A-YCB0, K9F2808U0A-YIB0  
FLASH MEMORY  
Document Title  
16M x 8 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
Initial issue.  
April 10th 1999  
Advanced  
Information  
1. Revised real-time map-out algorithm(refer to technical notes)  
July 23th 1999  
Sep. 15th 1999  
1. Changed device name  
- KM29U128AT -> K9F2808U0A-YCB0  
- KM29U128AIT -> K9F2808U0A-YIB0  
0.3  
1. Changed sequential row read opera tion  
Mar. 21th 2000  
Preliminary  
Preliminary  
Final  
- The Sequential Read 1 and 2 operation is allowed only within a block  
2. Changed invalid block(s) marking method prior to shipping  
- The invalid block(s) information is written the 1st or 2nd page of the  
invalid block(s) with 00h data  
--->The invalid block(s) status is defined by the 6th byte in the spare  
area. Samsung makes sure that either the 1st or 2nd page of every  
invalid block has 00h data at the column address of 517.  
0.4  
1. Changed endurance : 1million -> 100K program/erase cycles  
2. Changed invalid block(s) marking method prior to shipping  
- The invalid block(s) status is defined by the 6th byte in the spare  
area. Samsung makes sure that either the 1st or 2nd page of every  
invalid block has 00h data at the column address of 517.  
May 15th 2000  
--->The invalid block(s) status is defined by the 6th byte in the spare  
area. Samsung makes sure that either the 1st or 2nd page of every  
invalid block has non-FFh data at the column address of 517.  
0.5  
0.6  
1. Changed SE pin description  
- SE is recommended to coupled to GND or Vcc and should not be  
toggled during reading or programming.  
July 17th 2000  
Nov. 20th 2000  
1. Changed don’t care mode in address cycles  
- *X can be "High" or "Low" => *L must be set to "Low"  
2. Explain how pointer operation works in detail.  
3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)  
- The SE input controls the access of the spare area. When SE is high,  
the spare area is not accessible for reading or programming. SE is rec  
ommended to be coupled to GND or Vcc and should not be toggled  
during reading or programming.  
=> Connect this input pin to GND or set to static low state unless the  
sequential read mode excluding spare area is used.  
4. Updated operation for tRST timing  
- If reset command(FFh) is written at Ready state, the device goes into  
Busy for maximum 5us.  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
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K9F2808U0A-YIB0 SAMSUNG

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K9F2808U0B-BCB0 SAMSUNG

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K9F2808U0B-BIB0 SAMSUNG

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 		Flash, 16MX8, 35ns, PBGA48
K9F2808U0B-D SAMSUNG

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K9F2808U0B-DCB00 SAMSUNG

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 		Flash, 16MX8, 35ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
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 		16M x 8 Bit NAND Flash Memory
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 		16M x 8 Bit NAND Flash Memory

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