是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | TSSOP, TSSOP56,.8,20 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最长访问时间: | 70 ns | 启动块: | BOTTOM/TOP |
命令用户界面: | YES | 通用闪存接口: | YES |
数据轮询: | YES | JESD-30 代码: | R-PDSO-G56 |
内存密度: | 268435456 bit | 内存集成电路类型: | EEPROM CARD |
内存宽度: | 16 | 湿度敏感等级: | 3 |
部门数/规模: | 8,126 | 端子数量: | 56 |
字数: | 16777216 words | 字数代码: | 16000000 |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 16MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSSOP | 封装等效代码: | TSSOP56,.8,20 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
电源: | 3/3.3 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 32K,128K | 最大待机电流: | 0.00006 A |
子类别: | Flash Memories | 最大压摆率: | 0.05 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 切换位: | YES |
类型: | NOR TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8P5615UQA-PI4D0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 70ns, PDSO56, 20 X 14 MM, LEAD FREE, TSOP1-56 | |
K8P5615UQA-PI4DT | SAMSUNG |
获取价格 |
EEPROM Card, 16MX16, 70ns, Parallel, CMOS, PDSO56 | |
K8P5616UZB | SAMSUNG |
获取价格 |
256Mb B-die Page NOR FLASH | |
K8P5616UZB-EC4E0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 80ns, PBGA64, 11 X 13 MM, 1 MM PITCH, LEAD FREE, FBGA-64 | |
K8P5616UZB-EE4E0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 80ns, PBGA64, 11 X 13 MM, 1 MM PITCH, LEAD FREE, FBGA-64 | |
K8P5616UZB-EI4E0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 80ns, PBGA64, 11 X 13 MM, 1 MM PITCH, LEAD FREE, FBGA-64 | |
K8P6415UQB-DC4B | SAMSUNG |
获取价格 |
Flash, 4MX16, 60ns, PBGA48, | |
K8P6415UQB-DC4BT | SAMSUNG |
获取价格 |
Flash, 4MX16, 60ns, PBGA48 | |
K8P6415UQB-DC4C | SAMSUNG |
获取价格 |
Flash, 4MX16, 65ns, PBGA48 | |
K8P6415UQB-DC4C0 | SAMSUNG |
获取价格 |
Flash, 4MX16, 65ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48 |