是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | BGA, BGA84,10X12,32 |
针数: | 84 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.92 | 最长访问时间: | 70 ns |
启动块: | BOTTOM/TOP | 命令用户界面: | YES |
通用闪存接口: | YES | 数据轮询: | YES |
JESD-30 代码: | R-PBGA-B84 | 内存密度: | 268435456 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
湿度敏感等级: | 3 | 功能数量: | 1 |
部门数/规模: | 8,126 | 端子数量: | 84 |
字数: | 16777216 words | 字数代码: | 16000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 16MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装等效代码: | BGA84,10X12,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 32K,128K | 最大待机电流: | 0.00006 A |
子类别: | Flash Memories | 最大压摆率: | 0.05 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL EXTENDED |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 切换位: | YES |
类型: | NOR TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8P5615UQA-FE4DT | SAMSUNG |
获取价格 |
EEPROM Card, 16MX16, 70ns, Parallel, CMOS, PBGA84 | |
K8P5615UQA-FI4D0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 70ns, PBGA84, 11.60 X 8 MM, FBGA-84 | |
K8P5615UQA-FI4DT | SAMSUNG |
获取价格 |
EEPROM Card, 16MX16, 70ns, Parallel, CMOS, PBGA84 | |
K8P5615UQA-PE4D0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 70ns, PDSO56, 20 X 14 MM, LEAD FREE, TSOP1-56 | |
K8P5615UQA-PE4DT | SAMSUNG |
获取价格 |
EEPROM Card, 16MX16, 70ns, Parallel, CMOS, PDSO56 | |
K8P5615UQA-PI4D0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 70ns, PDSO56, 20 X 14 MM, LEAD FREE, TSOP1-56 | |
K8P5615UQA-PI4DT | SAMSUNG |
获取价格 |
EEPROM Card, 16MX16, 70ns, Parallel, CMOS, PDSO56 | |
K8P5616UZB | SAMSUNG |
获取价格 |
256Mb B-die Page NOR FLASH | |
K8P5616UZB-EC4E0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 80ns, PBGA64, 11 X 13 MM, 1 MM PITCH, LEAD FREE, FBGA-64 | |
K8P5616UZB-EE4E0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 80ns, PBGA64, 11 X 13 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |