是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | BGA, BGA64,8X8,40 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最长访问时间: | 70 ns |
备用内存宽度: | 8 | 命令用户界面: | YES |
通用闪存接口: | YES | 数据轮询: | YES |
JESD-30 代码: | S-PBGA-B64 | JESD-609代码: | e3 |
内存密度: | 134217728 bit | 内存集成电路类型: | EEPROM CARD |
内存宽度: | 16 | 湿度敏感等级: | 1 |
部门数/规模: | 128 | 端子数量: | 64 |
字数: | 8388608 words | 字数代码: | 8000000 |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 8MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装等效代码: | BGA64,8X8,40 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY |
页面大小: | 8/16 words | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 225 | 电源: | 1.8/3.3,3/3.3 V |
编程电压: | 2.7 V | 认证状态: | Not Qualified |
就绪/忙碌: | YES | 部门规模: | 128K |
最大待机电流: | 0.00004 A | 子类别: | Flash Memories |
最大压摆率: | 0.055 mA | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | MATTE TIN | 端子形式: | BALL |
端子节距: | 1 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 切换位: | YES |
类型: | NOR TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8P2716UZC-JE4E0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 80ns, PBGA64, 11 X 13 MM, 1 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-64 | |
K8P2716UZC-JE4ET | SAMSUNG |
获取价格 |
EEPROM Card, 8MX16, 80ns, Parallel, CMOS, PBGA64 | |
K8P2716UZC-JI4C0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 65ns, PBGA64, 11 X 13 MM, 1 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-64 | |
K8P2716UZC-JI4D0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 70ns, PBGA64, 11 X 13 MM, 1 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-64 | |
K8P2716UZC-JI4ET | SAMSUNG |
获取价格 |
EEPROM Card, 8MX16, 80ns, Parallel, CMOS, PBGA64 | |
K8P2716UZC-QC4CT | SAMSUNG |
获取价格 |
EEPROM Card, 8MX16, 65ns, Parallel, CMOS, PDSO56 | |
K8P2716UZC-QC4D0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 70ns, PDSO56, 20 X 14 MM, HALOGEN FREE AND LEAD FREE, PLASTIC, TSOP1-56 | |
K8P2716UZC-QC4DT | SAMSUNG |
获取价格 |
EEPROM Card, 8MX16, 70ns, Parallel, CMOS, PDSO56 | |
K8P2716UZC-QC4ET | SAMSUNG |
获取价格 |
EEPROM Card, 8MX16, 80ns, Parallel, CMOS, PDSO56 | |
K8P2716UZC-QE4CT | SAMSUNG |
获取价格 |
EEPROM Card, 8MX16, 65ns, Parallel, CMOS, PDSO56 |