是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA64,10X14,20 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最长访问时间: | 110 ns |
启动块: | TOP | 命令用户界面: | YES |
通用闪存接口: | YES | 数据轮询: | YES |
JESD-30 代码: | R-PBGA-B64 | 内存密度: | 536870912 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
部门数/规模: | 4,511 | 端子数量: | 64 |
字数: | 33554432 words | 字数代码: | 32000000 |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 32MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA64,10X14,20 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
并行/串行: | PARALLEL | 电源: | 1.8 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 16K,64K | 最大待机电流: | 0.00002 A |
子类别: | Flash Memories | 最大压摆率: | 0.055 mA |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 0.5 mm |
端子位置: | BOTTOM | 切换位: | YES |
类型: | NOR TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8F1215ETM-SC1D0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 110ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8F1215ETM-SC1E0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 110ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8F1215ETM-SC1F0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 110ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8F1215ETM-SE1C | SAMSUNG |
获取价格 |
Flash, 32MX16, 110ns, PBGA64 | |
K8F1215ETM-SE1C0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 110ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8F1215ETM-SE1D | SAMSUNG |
获取价格 |
Flash, 32MX16, 110ns, PBGA64, | |
K8F1215ETM-SE1D0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 110ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8F1215ETM-SE1E0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 110ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8F1215ETM-SE1F0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 110ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8F1315EBM-DC1C0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 110ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 |