是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FBGA, BGA48,6X8,32 | Reach Compliance Code: | compliant |
风险等级: | 5.8 | 最长访问时间: | 70 ns |
备用内存宽度: | 8 | 启动块: | TOP |
命令用户界面: | YES | 通用闪存接口: | YES |
数据轮询: | YES | JESD-30 代码: | R-PBGA-B48 |
内存密度: | 67108864 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 部门数/规模: | 8,127 |
端子数量: | 48 | 字数: | 4194304 words |
字数代码: | 4000000 | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 4MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA48,6X8,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 认证状态: | Not Qualified |
就绪/忙碌: | YES | 部门规模: | 8K,64K |
最大待机电流: | 0.00003 A | 子类别: | Flash Memories |
最大压摆率: | 0.05 mA | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 切换位: | YES |
类型: | NOR TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8D6316UTM-DC08 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UTM-DC080 | SAMSUNG |
获取价格 |
Flash, 4MX16, 80ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48 | |
K8D6316UTMDC0800 | SAMSUNG |
获取价格 |
Flash, 4MX16, 80ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48 | |
K8D6316UTM-DC09 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UTM-DC090 | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48 | |
K8D6316UTM-DC09T | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PBGA48 | |
K8D6316UTM-DI07 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UTM-DI070 | SAMSUNG |
获取价格 |
Flash, 4MX16, 70ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48 | |
K8D6316UTM-DI07T | SAMSUNG |
获取价格 |
暂无描述 | |
K8D6316UTM-DI08 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |