是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA48,6X8,32 | Reach Compliance Code: | compliant |
风险等级: | 5.92 | 最长访问时间: | 90 ns |
备用内存宽度: | 8 | 启动块: | BOTTOM |
命令用户界面: | YES | 通用闪存接口: | YES |
数据轮询: | YES | JESD-30 代码: | R-PBGA-B48 |
内存密度: | 67108864 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 部门数/规模: | 8,127 |
端子数量: | 48 | 字数: | 4194304 words |
字数代码: | 4000000 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 4MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA48,6X8,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 8K,64K | 最大待机电流: | 0.00003 A |
子类别: | Flash Memories | 最大压摆率: | 0.05 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
切换位: | YES | 类型: | NOR TYPE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8D6316UBM-TI090 | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, TBGA-48 | |
K8D6316UBMTI0900 | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, TBGA-48 | |
K8D6316UBM-TI09T | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PBGA48 | |
K8D6316UBM-YC07 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBM-YC08 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBMYC0800 | SAMSUNG |
获取价格 |
Flash, 4MX16, 80ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 | |
K8D6316UBM-YC08T | SAMSUNG |
获取价格 |
暂无描述 | |
K8D6316UBM-YC09 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBM-YC090 | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 | |
K8D6316UBMYC0900 | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 |