Datasheet > 存储 > SRAM> K7I641882M-FC30

K7I641882M-FC30

更新时间： 2024-01-25 13:16:26

品牌	Logo	应用领域
三星 - SAMSUNG		存储内存集成电路静态存储器双倍数据速率时钟
页数	文件大小	规格书
17页	306K
描述
72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)

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K7I641882M-FC30 技术参数

K7I643682M

K7I641882M

2Mx36 & 4Mx18 DDRII CIO b2 SRAM

72Mb M-die DDRII SRAM Specification

165 FBGA with Pb & Pb-Free

(RoHS compliant)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.

ALL INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-

lar applications where Product failure couldresult in loss of life or personal or physical harm, or any military

or defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Aug. 2005

Rev 1.0

- 1 -

12 3 4 5 6 7...17

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型号	品牌	描述	获取价格	数据表
K7I641882M-FC300	SAMSUNG	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	获取价格
K7I641882M-FC30T	SAMSUNG	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165	获取价格
K7I641882M-FI160	SAMSUNG	DDR SRAM, 4MX18, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	获取价格
K7I641882M-FI16T	SAMSUNG	Standard SRAM, 4MX18, 0.5ns, CMOS, PBGA165	获取价格
K7I641882M-FI250	SAMSUNG	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	获取价格
K7I641882M-FI25T	SAMSUNG	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165	获取价格