Datasheet > K7B403625M-QC80

K7B403625M-QC80

更新时间： 2024-09-17 19:35:55

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
16页	438K
描述
Standard SRAM, 128KX36, 8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

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技术参数
数据手册

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K7B403625M-QC80 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	LQFP, QFP100,.63X.87	Reach Compliance Code：	unknown
风险等级：	5.92	Base Number Matches：	1

K7B403625M-QC80 数据手册

K7B403625M

128Kx36 Synchronous SRAM

Document Title

128Kx36-Bit Synchronous Burst SRAM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

0.1

Initial draft

May. 15. 1997

Feb. 11. 1998

Preliminary

Modify power down cycle timing & Interleaved read timing,

Insert Note 4 at AC timing characteristics.

Change ISB1 value from 10mA to 30mA.

Change ISB2 value from 10mA to 20mA.

0.2

0.3

Change Undershoot spec

April. 14. 1998

May. 13. 1998

Preliminary

from -3.0V(pulse width£20ns) to -2.0V(pulse width£tCYC/2)

Add Overshoot spec 4.6V((pulse width£tCYC/2)

Change VIH max from 5.5V to VDD+0.5V

Change ISB2 value from 20mA to 30mA.

Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V.

1.0

2.0

Final spec Release

May. 15. 1998

Dec. 02. 1998

Final

Add VDDQ Supply voltage( 2.5V )

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

December 1998

Rev 2.0

12 3 4 5 6 7...16

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与K7B403625M-QC80相关器件

型号	品牌	获取价格	描述	数据表
K7B403625M-QC800	SAMSUNG	获取价格	Cache SRAM, 128KX36, 8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B403625M-QC90	SAMSUNG	获取价格	Standard SRAM, 128KX36, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B403625M-TC75	SAMSUNG	获取价格	Cache SRAM, 128KX36, 7.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B403625M-TC80	SAMSUNG	获取价格	Cache SRAM, 128KX36, 8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B403625M-TC90	SAMSUNG	获取价格	Cache SRAM, 128KX36, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B801825A-HC750	SAMSUNG	获取价格	Cache SRAM, 512KX18, 7.5ns, CMOS, PBGA119, BGA-119
K7B801825A-HC75T	SAMSUNG	获取价格	Standard SRAM, 512KX18, 3.5ns, CMOS, PBGA119
K7B801825A-HC900	SAMSUNG	获取价格	Cache SRAM, 512KX18, 9ns, CMOS, PBGA119, BGA-119
K7B801825A-HC90T	SAMSUNG	获取价格	Standard SRAM, 512KX18, 3.5ns, CMOS, PBGA119
K7B801825A-QC10	SAMSUNG	获取价格	Standard SRAM, 512KX18, 3.5ns, CMOS, PQFP100