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K7A803601M-QC10 PDF预览

K7A803601M-QC10

更新时间: 2024-09-23 14:51:47
品牌 Logo 应用领域
三星 - SAMSUNG 时钟静态存储器内存集成电路
页数 文件大小 规格书
17页 466K
描述
Standard SRAM, 256KX36, 4.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

K7A803601M-QC10 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:LQFP, QFP100,.63X.87Reach Compliance Code:unknown
风险等级:5.92最长访问时间:4.5 ns
其他特性:PIPELINED ARCHITECTURE最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e0长度:20 mm
内存密度:9437184 bit内存集成电路类型:STANDARD SRAM
内存宽度:36湿度敏感等级:3
功能数量:1端子数量:100
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装等效代码:QFP100,.63X.87
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:2.5/3.3,3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.03 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.35 mA最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
宽度:14 mmBase Number Matches:1

K7A803601M-QC10 数据手册

 浏览型号K7A803601M-QC10的Datasheet PDF文件第2页浏览型号K7A803601M-QC10的Datasheet PDF文件第3页浏览型号K7A803601M-QC10的Datasheet PDF文件第4页浏览型号K7A803601M-QC10的Datasheet PDF文件第5页浏览型号K7A803601M-QC10的Datasheet PDF文件第6页浏览型号K7A803601M-QC10的Datasheet PDF文件第7页 
K7A803601M  
K7A801801M  
256Kx36 & 512Kx18 Synchronous SRAM  
Document Title  
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM  
Revision History  
Draft Date  
Rev. No.  
History  
Remark  
May. 07 . 1998  
June .08. 1998  
Preliminary  
Preliminary  
0.0  
0.1  
Initial draft  
Modify DC characteristics( Input Leakage Current test Conditions)  
form VDD=VSS to VDD to Max.  
Aug. 20. 1998 Preliminary  
Aug. 27. 1998 Preliminary  
0.2  
0.3  
Remove 119BGA Package Type.  
Change DC Characteristics.  
ISB value from 65mA to 110mA at -72  
ISB value from 60mA to 110mA at -85  
ISB value from 50mA to 100mA at -10  
ISB1 value from 10mA to 30mA  
ISB2 value from 10mA to 30mA  
Sep. 09. 1998 Preliminary  
0.4  
1. Changed tCD from 4.0ns to 4.2ns at -85.  
Changed tOE from 4.0ns to 4.2ns at -85.  
2. Changed DC condition at Icc and parameters  
Icc ; from 375mA to 400mA at -72,  
from 340mA to 380mA at -85,  
from 300mA to 350mA at -10,  
ISB ; from 110mA to 130mA at -72,  
from 110mA to 130mA at -85,  
from 100mA to 120mA at -10  
Dec. 10. 1998  
Dec. 23. 1998  
Jan. 29. 1999  
Feb. 25. 1999  
May. 13. 1999  
Preliminary  
Preliminary  
Final  
0.5  
0.6  
1.0  
2.0  
3.0  
ADD VDDQ Supply voltage( 2.5V )  
Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.  
Final spec Release.  
Final  
1. Remove VDDQ Supply voltage( 2.5V I/O )  
1. Add VDDQ Supply voltage( 2.5V I/O )  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
May 1999  
Rev 3.0  

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