Datasheet > K7A803601M

K7A803601M

更新时间： 2024-02-13 13:41:06

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
17页	467K
描述
256Kx36 & 512Kx18 Synchronous SRAM

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K7A803601M 数据手册

K7A803601M

K7A801801M

256Kx36 & 512Kx18 Synchronous SRAM

Document Title

256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM

Revision History

Draft Date

Rev. No.

History

Remark

May. 07 . 1998

June .08. 1998

Preliminary

0.0

0.1

Initial draft

Modify DC characteristics( Input Leakage Current test Conditions)

form VDD=VSS to VDD to Max.

Aug. 20. 1998 Preliminary

Aug. 27. 1998 Preliminary

0.2

0.3

Remove 119BGA Package Type.

Change DC Characteristics.

ISB value from 65mA to 110mA at -72

ISB value from 60mA to 110mA at -85

ISB value from 50mA to 100mA at -10

ISB1 value from 10mA to 30mA

ISB2 value from 10mA to 30mA

Sep. 09. 1998 Preliminary

0.4

1. Changed tCD from 4.0ns to 4.2ns at -85.

Changed tOE from 4.0ns to 4.2ns at -85.

2. Changed DC condition at Icc and parameters

Icc ; from 375mA to 400mA at -72,

from 340mA to 380mA at -85,

from 300mA to 350mA at -10,

ISB ; from 110mA to 130mA at -72,

from 110mA to 130mA at -85,

from 100mA to 120mA at -10

Dec. 10. 1998

Dec. 23. 1998

Jan. 29. 1999

Feb. 25. 1999

May. 13. 1999

Preliminary

Final

0.5

0.6

1.0

2.0

3.0

ADD VDDQ Supply voltage( 2.5V )

Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.

Final spec Release.

Final

1. Remove VDDQ Supply voltage( 2.5V I/O )

1. Add VDDQ Supply voltage( 2.5V I/O )

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

May 1999

Rev 3.0

12 3 4 5 6 7...17

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与K7A803601M相关器件

型号	品牌	获取价格	描述	数据表
K7A803601M-QC10	SAMSUNG	获取价格	Standard SRAM, 256KX36, 4.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
K7A803601M-QC110	SAMSUNG	获取价格	Cache SRAM, 256KX36, 4.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A803601M-QC14	SAMSUNG	获取价格	Standard SRAM, 256KX36, 4ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
K7A803601M-TC10	SAMSUNG	获取价格	Cache SRAM, 256KX36, 4.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A803601M-TC11	SAMSUNG	获取价格	Cache SRAM, 256KX36, 4.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A803608B-QC20	SAMSUNG	获取价格	Cache SRAM, 256KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
K7A803608B-QC200	SAMSUNG	获取价格	Cache SRAM, 256KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
K7A803608B-QC22	SAMSUNG	获取价格	Cache SRAM, 256KX36, 2.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
K7A803608B-QI20	SAMSUNG	获取价格	Cache SRAM, 256KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
K7A803608B-QI22	SAMSUNG	获取价格	Cache SRAM, 256KX36, 2.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100