是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | TSOP, TSOP32,.46 | Reach Compliance Code: | compliant |
风险等级: | 5.88 | 最长访问时间: | 70 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PDSO-G32 |
JESD-609代码: | e0 | 内存密度: | 4194304 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP |
封装等效代码: | TSOP32,.46 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
电源: | 5 V | 认证状态: | Not Qualified |
最小待机电流: | 2 V | 子类别: | SRAMs |
最大压摆率: | 0.055 mA | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6T4008U1B-GB10 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | |
K6T4008U1B-GB100 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | |
K6T4008U1B-GB10T | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32 | |
K6T4008U1B-GB85 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | |
K6T4008U1B-GB850 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | |
K6T4008U1B-GF850 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | |
K6T4008U1B-MB10 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 | |
K6T4008U1B-MB85 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 | |
K6T4008U1B-MB850 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 | |
K6T4008U1B-MF100 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 |