Datasheet > 存储 > SRAM> K6R4008V1C-TC15

K6R4008V1C-TC15

更新时间： 2024-10-01 10:48:15

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	137K
描述
Standard SRAM, 512KX8, 15ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44

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K6R4008V1C-TC15 数据手册

PRELIMINARY

CMOS SRAM

K6R4008V1C-C/C-L, K6R4008V1C-I/C-P

3Document Title

512Kx8 Bit High Speed Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

RevNo.

Rev. 0.0

Rev. 1.0

History

Remark

Draft Data

Initial release with Preliminary.

Preliminary

Feb. 12. 1999

Mar. 29. 1999

1.1 Removed Low power Version.

1.2 Removed Data Retention Characteristics.

1.3 Changed ISB1 to 20mA

Rev. 2.0

Rev. 3.0

Relax D.C parameters.

Preliminary

Aug. 19. 1999

Mar. 27. 2000

Item

160mA

155mA

150mA

Current

195mA

190mA

185mA

12ns

15ns

20ns

ICC

Final

3.1 Delete Preliminary

3.2 Update D.C parameters and 10ns part.

Current

ICC

195mA

190mA

185mA

Isb

Isb1

ICC

Isb

Isb1

10ns

12ns

15ns

20ns

155mA

145mA

135mA

125mA

70mA

20mA

60mA

10mA

Add Low Power-Ver.

Delete 20ns speed bin

Rev. 4.0

Rev. 5.0

Final

Apr. 24. 2000

Sep. 24. 2001

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 5.0

September 2001

- 1 -

12 3 4 5 6 7...9

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