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K4T51163QE

更新时间： 2024-11-19 03:46:59

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器双倍数据速率
页数	文件大小	规格书
45页	943K
描述
512Mb E-die DDR2 SDRAM Specification

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K4T51163QE 数据手册

K4T51043QE

K4T51083QE

K4T51163QE

DDR2 SDRAM

512Mb E-die DDR2 SDRAM Specification

60FBGA & 84FBGA with Pb-Free

(RoHS compliant)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure couldresult in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.8 July 2007

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型号	品牌	获取价格	描述	数据表
K4T51163QE-ZCCC	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA90
K4T51163QE-ZCD5	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA90
K4T51163QE-ZCD5T	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA90
K4T51163QE-ZCE6	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA90
K4T51163QE-ZCE7	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA90
K4T51163QE-ZCE70	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
K4T51163QE-ZCE7T	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA90
K4T51163QE-ZCF70	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
K4T51163QE-ZLCCT	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA90
K4T51163QE-ZLD5	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA90