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K4T1G044QQ PDF预览

K4T1G044QQ

更新时间: 2024-11-11 03:46:59
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
44页 886K
描述
1Gb Q-die DDR2 SDRAM Specification

K4T1G044QQ 数据手册

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K4T1G044QQ  
K4T1G084QQ  
K4T1G164QQ  
DDR2 SDRAM  
1Gb Q-die DDR2 SDRAM Specification  
60FBGA & 84FBGA with Pb-Free & Halogen-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
1 of 44  
Rev. 1.01 November 2007  

与K4T1G044QQ相关器件

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K4T1G044QQ-HC(L)E6 SAMSUNG

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1Gb Q-die DDR2 SDRAM Specification
K4T1G044QQ-HC(L)E7 SAMSUNG

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1Gb Q-die DDR2 SDRAM Specification
K4T1G044QQ-HC(L)F7 SAMSUNG

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1Gb Q-die DDR2 SDRAM Specification
K4T1G044QQ-HCD60 SAMSUNG

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DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
K4T1G044QQ-HCE6 SAMSUNG

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1Gb Q-die DDR2 SDRAM Specification
K4T1G044QQ-HCE60 SAMSUNG

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DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
K4T1G044QQ-HCE6T SAMSUNG

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DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60
K4T1G044QQ-HCE7 SAMSUNG

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1Gb Q-die DDR2 SDRAM Specification
K4T1G044QQ-HCE70 SAMSUNG

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DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
K4T1G044QQ-HCE7T SAMSUNG

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DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60