Datasheet > K4S643233H-FE

K4S643233H-FE

更新时间： 2024-11-18 22:33:23

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	142K
描述
Mobile-SDRAM

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中文翻译

获取价格

数据手册

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K4S643233H-FE 数据手册

K4S643233H - F(H)E/N/G/C/L/F

Mobile-SDRAM

512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• 3.0V & 3.3V power supply.

The K4S643233H is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 90Balls FBGA with 0.8mm ball pitch

( -FXXX : Leaded, -HXXX : Lead Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S643233H-F(H)E/N/G/C/L/F60

K4S643233H-F(H)E/N/G/C/L/F75

K4S643233H-F(H)E/N/G/C/L/F1H

K4S643233H-F(H)E/N/G/C/L/F1L

166MHz(CL=3)

133MHz(CL=3)

105MHz(CL=2)

90 FBGA

Leaded (Lead Free)

LVCMOS

105MHz(CL=3)^*1

- F(H)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C)

- F(H)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

February 2004

12 3 4 5 6 7...12

中文翻译

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与K4S643233H-FE相关器件

型号	品牌	获取价格	描述	数据表
K4S643233H-FE1L	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90
K4S643233H-FE1L0	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90
K4S643233H-FE60	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90
K4S643233H-FE600	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4S643233H-FE75	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90
K4S643233H-FE750	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90
K4S643233H-FF1H	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90
K4S643233H-FF60	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90
K4S643233H-FG1H	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90
K4S643233H-FG1H0	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90

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